SKM200GB063D
IGBT Transistor Datasheet. Parameters and Characteristics. Type Designator: SKM200GB063D
Type of IGBT channel: N-Channel
Maximum power dissipation (Pc) of IGBT transistor, W: 875W
Maximum collector-emitter voltage |Uce|, V: 600V
Collector-emitter saturation voltage |Ucesat|, V: 2.1V
Maximum gate-emitter voltage |Ueg|, V:
Maximum collector current |Ic|, A: 200A
Maximum junction temperature (Tj), °C: 150
Rise time, nS: 0
Maximum collector capacity (Cc), pF:
Package: -
Equivalent transistors for SKM200GB063D
SKM200GB063D
PDF document for downloads: PDF unavailable! See also transistors datasheet: SKM195GB124DN
, SKM200GA123D
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, SKM200GAX173D
, SKM200GAY173D
, HGTG30N60A4
, SKM200GB123D
, SKM200GB124D
, SKM200GB173D
, SKM200GB174D
, SKM200GBD123D1S
, SKM200GD062DK
, SKM22GD123D
, SKM300GA123D
. Keywords| SKM200GB063D
Datasheet | SKM200GB063D
Datenblatt | SKM200GB063D
RoHS | SKM200GB063D
Distributor | | SKM200GB063D
Application Notes | SKM200GB063D
Component | SKM200GB063D
Circuit | SKM200GB063D
Schematic | | SKM200GB063D
Equivalent | SKM200GB063D
Cross Reference | SKM200GB063D
Data Sheet | SKM200GB063D
Fiche Technique |
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