SKM300GAL063D
IGBT Transistor Datasheet. Parameters and Characteristics. Type Designator: SKM300GAL063D
Type of IGBT channel: N-Channel
Maximum power dissipation (Pc) of IGBT transistor, W: 1350W
Maximum collector-emitter voltage |Uce|, V: 600V
Collector-emitter saturation voltage |Ucesat|, V: 2.1V
Maximum gate-emitter voltage |Ueg|, V:
Maximum collector current |Ic|, A: 300A
Maximum junction temperature (Tj), °C: 150
Rise time, nS: 0
Maximum collector capacity (Cc), pF:
Package: -
Equivalent transistors for SKM300GAL063D
SKM300GAL063D
PDF document for downloads: PDF unavailable! See also transistors datasheet: SKM200GB124D
, SKM200GB173D
, SKM200GB174D
, SKM200GBD123D1S
, SKM200GD062DK
, SKM22GD123D
, SKM300GA123D
, SKM300GA173D
, P12N60C3
, SKM300GAL123D
, SKM300GAR063D
, SKM300GAR123D
, SKM300GAX123D
, SKM300GAY123D
, SKM300GB063D
, SKM300GB123D
, SKM300GB124D
. Keywords| SKM300GAL063D
Datasheet | SKM300GAL063D
Datenblatt | SKM300GAL063D
RoHS | SKM300GAL063D
Distributor | | SKM300GAL063D
Application Notes | SKM300GAL063D
Component | SKM300GAL063D
Circuit | SKM300GAL063D
Schematic | | SKM300GAL063D
Equivalent | SKM300GAL063D
Cross Reference | SKM300GAL063D
Data Sheet | SKM300GAL063D
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