SKM75GB123D IGBT. Datasheet pdf. Equivalent
Type Designator: SKM75GB123D
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 460
Maximum Collector-Emitter Voltage |Vce|, V: 1200
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 75
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 2.5
Maximum G-E Threshold Voltag |VGE(th)|, V: 6.5
Maximum Junction Temperature (Tj), ℃: 150
Rise Time (tr), typ, nS: 56
Collector Capacity (Cc), typ, pF: 500
Total Gate Charge (Qg), typ, nC: 500
Package: MODULE
SKM75GB123D Transistor Equivalent Substitute - IGBT Cross-Reference Search
SKM75GB123D Datasheet (PDF)
skm75gb12t4.pdf
SKM75GB12T4Absolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Tc =25C 115 ATj = 175 CTc =80C 88 AICnom 75 AICRM ICRM = 3xICnom 225 AVGES -20 ... 20 VVCC = 800 VSEMITRANS2tpsc VGE 15 V Tj = 150 C 10 sVCES 1200 VTj -40 ... 175 CFast IGBT4 ModulesInverse diodeIF Tc =25C 97 ATj = 175 CSKM75GB12T4Tc =80C 73 A
skm75gb12v.pdf
SKM75GB12VAbsolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES Tj =25C 1200 VIC Tc =25C 114 ATj = 175 CTc =80C 87 AICnom 75 AICRM ICRM = 3xICnom 225 AVGES -20 ... 20 VVCC = 720 VSEMITRANS 2tpsc VGE 20 V Tj =125C 10 sVCES 1200 VTj -40 ... 175 CInverse diodeIF Tc =25C 97 ATj = 175 CSKM75GB12VTc =80C 73 AIFnom 75 A
Datasheet: SKM50GB123D , SKM50GD063DL , SKM50GDL063DL , SKM50GH063DL , SKM75GAL063D , SKM75GAL123D , BRG60N65D , SKM75GB063D , IRG4PC50UD , SKM75GB124D , SKM75GB173D , SKM75GD123D , SKM75GD124D , SKM75GDL123D , SM2G100US120 , SM2G100US60 , SM2G150US120 .
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IGBT: KDG20N120H2 | GT40T321 | SIB30N65G21F | SIW30N65G21F | SIP30N65G21F | SIF30N65G21F | SIB30N60G21B | SIW30N60G21B | SIP30N60G21B | SIF30N60G21B | SL40T65FL1