| |
SM2G150US120
IGBT Transistor Datasheet. Parameters and Characteristics. Type Designator: SM2G150US120
Type of IGBT channel: N-Channel
Maximum power dissipation (Pc) of IGBT transistor, W:
Maximum collector-emitter voltage |Uce|, V: 1200V
Collector-emitter saturation voltage |Ucesat|, V: 2.4V
Maximum gate-emitter voltage |Ueg|, V:
Maximum collector current |Ic|, A: 150A
Maximum junction temperature (Tj), °C: 150
Rise time, nS: 150
Maximum collector capacity (Cc), pF:
Package: 7PM-BB
Equivalent transistors for SM2G150US120
SM2G150US120
PDF document for downloads: PDF unavailable! See also transistors datasheet: SKM75GB123D
, SKM75GB124D
, SKM75GB173D
, SKM75GD123D
, SKM75GD124D
, SKM75GDL123D
, SM2G100US120
, SM2G100US60
, GT8N101
, SM2G150US60
, SM2G200US120
, SM2G200US60
, SM2G300US60
, SM2G400US60
, SM2G50US120
, SM2G50US60
, SM2G75US120
. Keywords| SM2G150US120
Datasheet | SM2G150US120
Datenblatt | SM2G150US120
RoHS | SM2G150US120
Distributor | | SM2G150US120
Application Notes | SM2G150US120
Component | SM2G150US120
Circuit | SM2G150US120
Schematic | | SM2G150US120
Equivalent | SM2G150US120
Cross Reference | SM2G150US120
Data Sheet | SM2G150US120
Fiche Technique |
|
