APT50GF60B2RD IGBT Transistor Datasheet. Parameters and Characteristics.

Type Designator: APT50GF60B2RD

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 300W

Maximum collector-emitter voltage |Uce|, V: 600V

Collector-emitter saturation voltage |Ucesat|, V:

Maximum gate-emitter voltage |Ueg|, V: 20V

Maximum collector current |Ic|, A: 50A

Maximum junction temperature (Tj), °C: 150

Rise time, nS: 0

Maximum collector capacity (Cc), pF:

Package: T-MAX

Equivalent transistors for APT50GF60B2RD

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See also transistors datasheet: APT33GF120LRD , APT40GF120JRD , APT40GT60BR , APT50GF120B2R , APT50GF120HR , APT50GF120JRD , APT50GF120LR , APT50GF60AR , IRGR3B60KD2 , APT50GF60BR , APT50GF60HR , APT50GF60LRD , APT60GF120JRD , APT60GT60BR , APT60GT60JR , APT60GT60JRD , APT8GT60KR .

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