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SMBH1G50US120 IGBT (IC) Datasheet. Cross Reference Search. SMBH1G50US120 Equivalent

Type Designator: SMBH1G50US120

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W:

Maximum collector-emitter voltage |Uce|, V: 1200V

Collector-emitter saturation voltage |Ucesat|, V: 2.4V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 50A

Maximum junction temperature (Tj), °C: 150

Rise time, nS: 150

Maximum collector capacity (Cc), pF:

Package: 7PM-AA

SMBH1G50US120 Transistor Equivalent Substitute - IGBT Cross-Reference Search

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See also transistors datasheet: SMBH1G100US120 , SMBH1G100US60 , SMBH1G150US120 , SMBH1G150US60 , SMBH1G200US120 , SMBH1G200US60 , SMBH1G300US60 , SMBH1G400US60 , RJP63K2DPK-M0 , SMBH1G50US60 , SMBH1G75US120 , SMBH1G75US60 , SMBL1G100US120 , SMBL1G100US60 , SMBL1G150US120 , SMBL1G150US60 , SMBL1G200US120 .

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