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1MB05D-120 IGBT (IC) Datasheet. Cross Reference Search. 1MB05D-120 Equivalent

Type Designator: 1MB05D-120

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 100W

Maximum Collector-Emitter Voltage |Vce|, V: 1200V

Collector-Emitter saturation Voltage |Vcesat|, V: 3.5V

Maximum Gate-Emitter Voltage |Veg|, V: 20V

Maximum Collector Current |Ic|, A: 9A

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 1200

Maximum Collector Capacity (Cc), pF:

Package: TO3P

1MB05D-120 Transistor Equivalent Substitute - IGBT Cross-Reference Search

1MB05D-120 PDF doc:

5.1. 1mb05-120.pdf Size:39K _igbt_a

1MB05D-120
1MB05D-120

Fuji Discrete Package IGBT n Outline Drawing n n Features n • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Minimized Internal Stray Inductance n Applications n • High Power Switching • A.C. Motor Controls • D.C. Motor Controls • Uninterruptible Power Supply n Maximum Ratings and Characteristics n Equivalent Circuit n n • Absolute Maxim

See also transistors datasheet: 10N40F1D , 10N50C1D , 10N50E1D , 10N50F1D , 12N60C3D , 14N36GVL , 1MB03D-120 , 1MB05-120 , GT60M303 , 1MB08-120 , 1MB08D-120 , 1MB10-120 , 1MB10D-120 , 1MB15D-060 , 1MB20-060 , 1MB20D-060 , 1MB30-060 .

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 1MB05D-120 - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


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IGBT: IXXH60N65C4 | IXXH60N65B4H1 | IXXH60N65B4 | IXXH40N65B4H1 | IXXH40N65B4 | IXXH30N65B4 | IXXH30N60C3 | IXXH30N60B3 | IXXH150N60C3 | IXXH110N65C4 |

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