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SME6G10US120 IGBT (IC) Datasheet. Cross Reference Search. SME6G10US120 Equivalent

Type Designator: SME6G10US120

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W:

Maximum collector-emitter voltage |Uce|, V: 1200V

Collector-emitter saturation voltage |Ucesat|, V: 2.4V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 10A

Maximum junction temperature (Tj), °C: 150

Rise time, nS: 150

Maximum collector capacity (Cc), pF:

Package: 17PM-BA

SME6G10US120 Transistor Equivalent Substitute - IGBT Cross-Reference Search

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See also transistors datasheet: SMC7G15US120 , SMC7G15US60 , SMC7G20US120 , SMC7G20US60 , SMC7G25US120 , SMC7G30US60 , SMC7G50US60 , SMC7G5US120 , GT60M303 , SME6G10US60 , SME6G15US120 , SME6G15US60 , SME6G20US120 , SME6G20US60 , SME6G25US120 , SME6G30US60 , SME6G50US60 .

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 SME6G10US120 - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


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IGBT: IRGP6660D | IRGP4660D | IRGP4063D1 | NGTB40N120IHLWG | NGTB40N120IHL | NGTB30N120IHLWG | NGTB30N120IHL | STGWA25M120DF3 | STGW25M120DF3 | IRGP4760D |

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