TA49052 IGBT Transistor Datasheet. Parameters and Characteristics.

Type Designator: TA49052

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 290W

Maximum collector-emitter voltage |Uce|, V: 600V

Collector-emitter saturation voltage |Ucesat|, V: 2V

Maximum gate-emitter voltage |Ueg|, V: 20V

Maximum collector current |Ic|, A: 70A

Maximum junction temperature (Tj), °C: 150

Rise time, nS: 47

Maximum collector capacity (Cc), pF:

Package: TO247

Equivalent transistors for TA49052

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See also transistors datasheet: TA49016 , TA49017 , TA49021 , TA49047 , TA49048 , TA49049 , TA49050 , TA49051 , GT60M301 , TA49076 , TA49113 , TA49115 , TA49117 , TA49119 , TA49121 , TA49123 , TA49182 .

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