TA49076 IGBT Transistor Datasheet. Parameters and Characteristics.

Type Designator: TA49076

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 150W

Maximum collector-emitter voltage |Uce|, V: 375V

Collector-emitter saturation voltage |Ucesat|, V: 1.6V

Maximum gate-emitter voltage |Ueg|, V: 10V

Maximum collector current |Ic|, A: 20A

Maximum junction temperature (Tj), °C: 150

Rise time, nS: 30000

Maximum collector capacity (Cc), pF:

Package: TO220AB

Equivalent transistors for TA49076

TA49076 PDF document for downloads:

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See also transistors datasheet: TA49017 , TA49021 , TA49047 , TA49048 , TA49049 , TA49050 , TA49051 , TA49052 , HGTG20N60A4 , TA49113 , TA49115 , TA49117 , TA49119 , TA49121 , TA49123 , TA49182 , TA9895 .

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