TA49117 IGBT Transistor Datasheet. Parameters and Characteristics.

Type Designator: TA49117

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 104W

Maximum collector-emitter voltage |Uce|, V: 600V

Collector-emitter saturation voltage |Ucesat|, V: 2V

Maximum gate-emitter voltage |Ueg|, V: 20V

Maximum collector current |Ic|, A: 24A

Maximum junction temperature (Tj), °C: 150

Rise time, nS: 14

Maximum collector capacity (Cc), pF:

Package: TO247

Equivalent transistors for TA49117

TA49117 PDF document for downloads:

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See also transistors datasheet: TA49048 , TA49049 , TA49050 , TA49051 , TA49052 , TA49076 , TA49113 , TA49115 , IRG4PF50WD , TA49119 , TA49121 , TA49123 , TA49182 , TA9895 , FGA15N120ANTDTU_F109 , FGA15N120FTD , FGA180N33ATD .

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