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FGD3N60LSD IGBT (IC) Datasheet. Cross Reference Search. FGD3N60LSD Equivalent

Type Designator: FGD3N60LSD

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W:

Maximum collector-emitter voltage |Uce|, V: 600V

Collector-emitter saturation voltage |Ucesat|, V: 1.2V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 6.0A

Maximum junction temperature (Tj), °C:

Rise time, nS: 0

Maximum collector capacity (Cc), pF:

Package: TO252(DPAK)

FGD3N60LSD Transistor Equivalent Substitute - IGBT Cross-Reference Search

FGD3N60LSD PDF doc:

1.1. fgd3n60lsd.pdf Size:872K _fairchild_semi

FGD3N60LSD
FGD3N60LSD

September 2006 FGD3N60LSD tm IGBT Features Description High Current Capability Fairchild's Insulated Gate Bipolar Transistors (IGBTs) provide very low conduction losses. The device is designed for applica- Very Low Saturation Voltage : VCE(sat) = 1.2 V @ IC = 3A tions where very low On-Voltage Drop is a required feature. High Input Impedance Applications HID Lamp Applications

See also transistors datasheet: FGA50N100BNTD , FGA50N100BNTD2 , FGA60N60UFD , FGA90N33ATD , FGAF40N60UF , FGAF40N60UFD , FGB20N60SF , FGB20N60SFD , GT60M101 , FGD4536 , FGH20N60SFD , FGH20N60UFD , FGH25N120FTDS , FGH30N120FTD , FGH30N60LSD , FGH40N60SF , FGH40N60SFD .

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IGBT: BT15N60A9F | BT50N60ANF | BT30N60ANF | BT40N60BNF | BT15N120ANF | BT15T120ANF | BT25T120ANF | SSIG20N135H | SSIG15N135H | BRG25N120D |

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