FGH25N120FTDS IGBT Transistor Datasheet. Parameters and Characteristics.

Type Designator: FGH25N120FTDS

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W:

Maximum collector-emitter voltage |Uce|, V: 1200V

Collector-emitter saturation voltage |Ucesat|, V: 1.6V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 25.0A

Maximum junction temperature (Tj), °C:

Rise time, nS: 0

Maximum collector capacity (Cc), pF:

Package: TO247

Equivalent transistors for FGH25N120FTDS

FGH25N120FTDS PDF document for downloads:

1.1. fgh25n120ftds.pdf Size:705K _fairchild_semi

June 2009 tm FGH25N120FTDS 1200V, 25A Field Stop Trench IGBT Features General Description • High speed switching Using advanced field stop trench technology, Fairchild’s 1200V trench IGBTs offer superior conduction and switching perfor- • Low saturation voltage: VCE(sat) = 1.60V @ IC = 25A mances, and easy parallel operation with exceptional avalanche • High input impedance ruggedness. This device is designed for General Inverter • RoHS compliant switching applications. Application • UPS, Solar Inverter, Welding Machine, General Purpose Inverters E C C G G COLLECTOR (FLANGE) E Absolute Maximum Ratings Symbol Description Ratings Units VCES Collector to Emitter Voltage 1200 V VGES Gate to Emitter Voltage ± 25 V Collector Current @ TC = 25oC50 A IC Collector Current @ TC = 100oC25 A ICM (1) Pulsed Collector Current 75 A 25 A IF Diode Continuous Forward Current @ TC = 100oC 75 A IFM Diode Maximum Forward Current Maximum Power Dissipation @ TC = 25oC313 W

See also transistors datasheet: FGAF40N60UF , FGAF40N60UFD , FGB20N60SF , FGB20N60SFD , FGD3N60LSD , FGD4536 , FGH20N60SFD , FGH20N60UFD , IRG4PC50FD , FGH30N120FTD , FGH30N60LSD , FGH40N60SF , FGH40N60SFD , FGH40N60SMD , FGH40N60SMDF , FGH40N60UF , FGH40N60UFD .

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