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FGH25N120FTDS IGBT (IC) Datasheet. Cross Reference Search. FGH25N120FTDS Equivalent

Type Designator: FGH25N120FTDS

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W:

Maximum collector-emitter voltage |Uce|, V: 1200V

Collector-emitter saturation voltage |Ucesat|, V: 1.6V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 25.0A

Maximum junction temperature (Tj), °C:

Rise time, nS: 0

Maximum collector capacity (Cc), pF:

Package: TO247

FGH25N120FTDS Transistor Equivalent Substitute - IGBT Cross-Reference Search

FGH25N120FTDS PDF doc:

1.1. fgh25n120ftds.pdf Size:705K _fairchild_semi

FGH25N120FTDS
FGH25N120FTDS

June 2009 tm FGH25N120FTDS 1200V, 25A Field Stop Trench IGBT Features General Description • High speed switching Using advanced field stop trench technology, Fairchild’s 1200V trench IGBTs offer superior conduction and switching perfor- • Low saturation voltage: VCE(sat) = 1.60V @ IC = 25A mances, and easy parallel operation with exceptional avalanche • High input impedance ruggedness. T

See also transistors datasheet: FGAF40N60UF , FGAF40N60UFD , FGB20N60SF , FGB20N60SFD , FGD3N60LSD , FGD4536 , FGH20N60SFD , FGH20N60UFD , IRG4PH50U , FGH30N120FTD , FGH30N60LSD , FGH40N60SF , FGH40N60SFD , FGH40N60SMD , FGH40N60SMDF , FGH40N60UF , FGH40N60UFD .

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IGBT: STGWT60V60DF | STGWT60H65FB | STGWT60H65DFB | STGWT60H60DLFB | STGWT28IH125DF | STGWA60H65DFB | STGWA25S120DF3 | STGWA25H120F2 | STGWA25H120DF2 | STGW60V60F |

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