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FGH30N120FTD IGBT (IC) Datasheet. Cross Reference Search. FGH30N120FTD Equivalent

Type Designator: FGH30N120FTD

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W:

Maximum collector-emitter voltage |Uce|, V: 1200V

Collector-emitter saturation voltage |Ucesat|, V: 1.6V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 30.0A

Maximum junction temperature (Tj), °C:

Rise time, nS: 0

Maximum collector capacity (Cc), pF:

Package: TO247

FGH30N120FTD Transistor Equivalent Substitute - IGBT Cross-Reference Search

FGH30N120FTD PDF doc:

1.1. fgh30n120ftd.pdf Size:582K _fairchild_semi

FGH30N120FTD
FGH30N120FTD

November 2008 FGH30N120FTD tm 1200V, 30A Trench IGBT Features General Description • Field stop trench technology Using advanced field stop trench technology, Fairchild’s 1200V trench IGBTs offer superior conduction and switching perfor- • High speed switching mances, and easy parallel operation with exceptional avalanche • Low saturation voltage: VCE(sat) = 1.6V @ IC = 30A ruggedness. Th

4.1. fgh30n60lsd.pdf Size:717K _fairchild_semi

FGH30N120FTD
FGH30N120FTD

July 2008 FGH30N60LSD tm Features General Description • Low saturation voltage: VCE(sat) =1.1V @ IC = 30A The FGH30N60LSD is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar • High Input Impedance transistors.This device has the high input impedance of a • Low Conduction Loss MOSFET and the low on-state conduction loss of a bipolar transistor.

See also transistors datasheet: FGAF40N60UFD , FGB20N60SF , FGB20N60SFD , FGD3N60LSD , FGD4536 , FGH20N60SFD , FGH20N60UFD , FGH25N120FTDS , GT60M102 , FGH30N60LSD , FGH40N60SF , FGH40N60SFD , FGH40N60SMD , FGH40N60SMDF , FGH40N60UF , FGH40N60UFD , FGH40N65UFD .

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IGBT: BT15N60A9F | BT50N60ANF | BT30N60ANF | BT40N60BNF | BT15N120ANF | BT15T120ANF | BT25T120ANF | SSIG20N135H | SSIG15N135H | BRG25N120D |

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