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FGH30N60LSD IGBT (IC) Datasheet. Cross Reference Search. FGH30N60LSD Equivalent

Type Designator: FGH30N60LSD

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W:

Maximum collector-emitter voltage |Uce|, V: 600V

Collector-emitter saturation voltage |Ucesat|, V: 1.1V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 30.0A

Maximum junction temperature (Tj), °C:

Rise time, nS: 0

Maximum collector capacity (Cc), pF:

Package: TO247

FGH30N60LSD Transistor Equivalent Substitute - IGBT Cross-Reference Search

FGH30N60LSD PDF doc:

1.1. fgh30n60lsd.pdf Size:717K _fairchild_semi

FGH30N60LSD
FGH30N60LSD

July 2008 FGH30N60LSD tm Features General Description • Low saturation voltage: VCE(sat) =1.1V @ IC = 30A The FGH30N60LSD is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar • High Input Impedance transistors.This device has the high input impedance of a • Low Conduction Loss MOSFET and the low on-state conduction loss of a bipolar transistor.

4.1. fgh30n120ftd.pdf Size:582K _fairchild_semi

FGH30N60LSD
FGH30N60LSD

November 2008 FGH30N120FTD tm 1200V, 30A Trench IGBT Features General Description • Field stop trench technology Using advanced field stop trench technology, Fairchild’s 1200V trench IGBTs offer superior conduction and switching perfor- • High speed switching mances, and easy parallel operation with exceptional avalanche • Low saturation voltage: VCE(sat) = 1.6V @ IC = 30A ruggedness. Th

See also transistors datasheet: FGB20N60SF , FGB20N60SFD , FGD3N60LSD , FGD4536 , FGH20N60SFD , FGH20N60UFD , FGH25N120FTDS , FGH30N120FTD , IRG4BC30W , FGH40N60SF , FGH40N60SFD , FGH40N60SMD , FGH40N60SMDF , FGH40N60UF , FGH40N60UFD , FGH40N65UFD , FGH50N3 .

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IGBT: IRGP6660D | IRGP4660D | IRGP4063D1 | NGTB40N120IHLWG | NGTB40N120IHL | NGTB30N120IHLWG | NGTB30N120IHL | STGWA25M120DF3 | STGW25M120DF3 | IRGP4760D |

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