All IGBT. FGH30N60LSD Datasheet

 

FGH30N60LSD IGBT. Datasheet pdf. Equivalent

Type Designator: FGH30N60LSD

Type of IGBT Channel: N-Channel

Maximum Collector-Emitter Voltage |Vce|, V: 600V

Collector-Emitter saturation Voltage |Vcesat|, V: 1.1V

Maximum Collector Current |Ic|, A: 30.0A

Rise Time, nS: 0

Package: TO247

FGH30N60LSD Transistor Equivalent Substitute - IGBT Cross-Reference Search

FGH30N60LSD 说明书

1.1. fgh30n60lsd.pdf Size:717K _fairchild_semi

FGH30N60LSD
FGH30N60LSD

July 2008 FGH30N60LSD tm Features General Description Low saturation voltage: VCE(sat) =1.1V @ IC = 30A The FGH30N60LSD is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar High Input Impedance transistors.This device has the high input impedance of a Low Conduction Loss MOSFET and the low on-state conduction loss of a bipolar transistor.

4.1. fgh30n120ftd.pdf Size:582K _fairchild_semi

FGH30N60LSD
FGH30N60LSD

November 2008 FGH30N120FTD tm 1200V, 30A Trench IGBT Features General Description Field stop trench technology Using advanced field stop trench technology, Fairchilds 1200V trench IGBTs offer superior conduction and switching perfor- High speed switching mances, and easy parallel operation with exceptional avalanche Low saturation voltage: VCE(sat) = 1.6V @ IC = 30A ruggedness. Th

Datasheet: FGB20N60SF , FGB20N60SFD , FGD3N60LSD , FGD4536 , FGH20N60SFD , FGH20N60UFD , FGH25N120FTDS , FGH30N120FTD , IRG4BC30W , FGH40N60SF , FGH40N60SFD , FGH40N60SMD , FGH40N60SMDF , FGH40N60UF , FGH40N60UFD , FGH40N65UFD , FGH50N3 .

 


FGH30N60LSD
  FGH30N60LSD
  FGH30N60LSD
  FGH30N60LSD
 
FGH30N60LSD
  FGH30N60LSD
  FGH30N60LSD
  FGH30N60LSD
 

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