FGH40N60SFD IGBT Transistor Datasheet. Parameters and Characteristics.

Type Designator: FGH40N60SFD

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W:

Maximum collector-emitter voltage |Uce|, V: 600V

Collector-emitter saturation voltage |Ucesat|, V: 2.3V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 40.0A

Maximum junction temperature (Tj), °C:

Rise time, nS: 0

Maximum collector capacity (Cc), pF:

Package: TO247

Equivalent transistors for FGH40N60SFD

FGH40N60SFD PDF document for downloads:

1.1. fgh40n60smd.pdf Size:1290K _fairchild_semi

November 2010 FGH40N60SMD 600V, 40A Field Stop IGBT Features General Description • Maximum Junction Temperature : TJ =175oC Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Solar • Positive Temperaure Co-efficient for easy parallel operating Inverter, UPS, Welder and SMPS applications where low con- • High current capability duction and switching losses are essential. • Low saturation voltage: VCE(sat) =1.9V(Typ.) @ IC = 40A • High input impedance • Fast switching • Tighten Parameter Distribution • RoHS compliant Applications • Solar Inverter • UPS, Welder, SMPS E C C G G COLLECTOR (FLANGE) E Absolute Maximum Ratings Symbol Description Ratings Units VCES Collector to Emitter Voltage 600 V VGES Gate to Emitter Voltage ± 20 V Collector Current @ TC = 25oC 80 A IC Collector Current @ TC = 100oC 40 A ICM (1) Pulsed Collector Current 120 A Diode Forward Current @ TC = 25oC 40 A IF Diode F

1.2. fgh40n60sf.pdf Size:677K _fairchild_semi

March 2009 FGH40N60SF tm 600V, 40A Field Stop IGBT Features General Description • High current capability Using Novel Field Stop IGBT Technology, Fairchild’s new ses- ries of Field Stop IGBTs offer the optimum performance for • Low saturation voltage: VCE(sat) =2.3V @ IC = 40A Inverter, UPS, SMPS and PFC applications where low conduc- • High input impedance tion and switching losses are essential. • Fast switching • RoHS compliant Applications • Inverter, UPS, SMPS, PFC E C G COLLECTOR (FLANGE) Absolute Maximum Ratings Symbol Description Ratings Units VCES Collector to Emitter Voltage 600 V VGES Gate to Emitter Voltage ± 20 V Collector Current @ TC = 25oC80 A IC Collector Current @ TC = 100oC40 A ICM (1) Pulsed Collector Current 120 A @ TC = 25oC Maximum Power Dissipation @ TC = 25oC290 W PD Maximum Power Dissipation @ TC = 100oC116 W o TJ Operating Junction Temperature -55 to +150 C o Tstg Storage Temperature Range -55 to +150 C Maximum Lead Temp.

1.3. fgh40n60smdf.pdf Size:352K _fairchild_semi

March 2011 FGH40N60SMDF tm 600V, 40A Field Stop IGBT Features General Description • Maximum Junction Temperature : TJ =175oC Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Solar • Positive Temperaure Co-efficient for easy parallel operating Inverter, UPS, SMPS, IH and PFC applications where low con- • High current capability duction and switching losses are essential. • Low saturation voltage: VCE(sat) =1.9V(Typ.) @ IC = 40A • High input impedance • Fast switching • Tighten Parameter Distribution • RoHS compliant Applications • Solar Inverter, UPS, SMPS, PFC • Induction Heating C G E Absolute Maximum Ratings Symbol Description Ratings Units VCES Collector to Emitter Voltage 600 V VGES Gate to Emitter Voltage ± 20 V Collector Current @ TC = 25oC 80 A IC Collector Current @ TC = 100oC 40 A ICM (1) Pulsed Collector Current 120 A Diode Forward Current @ TC = 25oC 40 A IF Diode Forward C

1.4. fgh40n60sfd.pdf Size:806K _fairchild_semi

July 2008 FGH40N60SFD tm 600V, 40A Field Stop IGBT Features General Description • High current capability Using Novel Field Stop IGBT Technology, Fairchild’s new ses- ries of Field Stop IGBTs offer the optimum performance for • Low saturation voltage: VCE(sat) =2.3V @ IC = 40A Induction Heating, UPS, SMPS and PFC applications where • High input impedance low conduction and switching losses are essential. • Fast switching • RoHS compliant Applications • Induction Heating, UPS, SMPS, PFC E C C G G COLLECTOR (FLANGE) E Absolute Maximum Ratings Symbol Description Ratings Units VCES Collector to Emitter Voltage 600 V VGES Gate to Emitter Voltage ± 20 V Collector Current @ TC = 25oC80 A IC Collector Current @ TC = 100oC40 A ICM (1) Pulsed Collector Current 120 A @ TC = 25oC Maximum Power Dissipation @ TC = 25oC290 W PD Maximum Power Dissipation @ TC = 100oC116 W o TJ Operating Junction Temperature -55 to +150 C o Tstg Storage Temperature Range -55 to +1

See also transistors datasheet: FGD3N60LSD , FGD4536 , FGH20N60SFD , FGH20N60UFD , FGH25N120FTDS , FGH30N120FTD , FGH30N60LSD , FGH40N60SF , IRGBC40S , FGH40N60SMD , FGH40N60SMDF , FGH40N60UF , FGH40N60UFD , FGH40N65UFD , FGH50N3 , FGH60N60SF , FGH60N60SFD .

Keywords