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FGH80N60FD IGBT (IC) Datasheet. Cross Reference Search. FGH80N60FD Equivalent

Type Designator: FGH80N60FD

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W:

Maximum collector-emitter voltage |Uce|, V: 600V

Collector-emitter saturation voltage |Ucesat|, V: 1.8V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 40.0A

Maximum junction temperature (Tj), °C:

Rise time, nS: 0

Maximum collector capacity (Cc), pF:

Package: TO247

FGH80N60FD Transistor Equivalent Substitute - IGBT Cross-Reference Search

FGH80N60FD PDF doc:

1.1. fgh80n60fd2.pdf Size:194K _fairchild_semi

FGH80N60FD
FGH80N60FD

November FGH80N60FD2 tm 600V, 80A Field Stop IGBT Features General Description • High current capability Using Novel Field Stop IGBT Technology, Fairchild’s new ses- ries of Field Stop IGBTs offer the optimum performance for • Low saturation voltage: VCE(sat) =1.8V @ IC = 40A Induction Heating applications where low conduction and • High input impedance switching losses are essential.

1.2. fgh80n60fd.pdf Size:201K _fairchild_semi

FGH80N60FD
FGH80N60FD

November 2009 FGH80N60FD tm 600V, 80A Field Stop IGBT Features General Description • High current capability Using Novel Field Stop IGBT Technology, Fairchild’s new ses- ries of Field Stop IGBTs offer the optimum performance for • Low saturation voltage: VCE(sat) =1.8V @ IC = 40A Induction Heating applications where low conduction and • High input impedance switching losses are essential

See also transistors datasheet: FGH40N60UFD , FGH40N65UFD , FGH50N3 , FGH60N60SF , FGH60N60SFD , FGH60N60SMD , FGH60N60UFD , FGH75N60UF , IXGR40N60C2D1 , FGH80N60FD2 , FGL35N120FTD , FGL60N100BNTD , FGP20N60UFD , FGP5N60LS , FGPF4533 , FGPF4536 , FGPF4633 .

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