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FGL35N120FTD IGBT (IC) Datasheet. Cross Reference Search. FGL35N120FTD Equivalent

Type Designator: FGL35N120FTD

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W:

Maximum collector-emitter voltage |Uce|, V: 1200V

Collector-emitter saturation voltage |Ucesat|, V: 1.68V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 35.0A

Maximum junction temperature (Tj), °C:

Rise time, nS: 0

Maximum collector capacity (Cc), pF:

Package: TO264

FGL35N120FTD Transistor Equivalent Substitute - IGBT Cross-Reference Search

FGL35N120FTD PDF doc:

1.1. fgl35n120ftd.pdf Size:727K _fairchild_semi

FGL35N120FTD
FGL35N120FTD

February 2010 FGL35N120FTD tm 1200V, 35A Trench IGBT Features General Description • Field Stop Trench Technology Using advanced field stop trench technology, Fairchild’s 1200V trench IGBTs offer superior conduction and switching perfor- • High Speed Switching mances, and easy parallel operation with exceptional avalanche • Low Saturation Voltage: VCE(sat) = 1.68 V @ IC = 35A ruggedness.

See also transistors datasheet: FGH50N3 , FGH60N60SF , FGH60N60SFD , FGH60N60SMD , FGH60N60UFD , FGH75N60UF , FGH80N60FD , FGH80N60FD2 , RJP30H1DPD , FGL60N100BNTD , FGP20N60UFD , FGP5N60LS , FGPF4533 , FGPF4536 , FGPF4633 , FGPF50N33BT , FGY75N60SMD .

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IGBT: IRGP4263 | AP50G60SW | NGTB60N60SWG | NGTB60N60S | NGTG15N120FL2WG | NGTG15N120FL2 | NGTB15N120FL2WG | NGTB15N120FL2 | RJH1CV6DPK | MM60G60B |

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