All IGBT. Datasheet

 

FGL35N120FTD IGBT. Datasheet pdf. Equivalent

Type Designator: FGL35N120FTD

Type of IGBT Channel: N-Channel

Maximum Collector-Emitter Voltage |Vce|, V: 1200V

Collector-Emitter saturation Voltage |Vcesat|, V: 1.68V

Maximum Collector Current |Ic|, A: 35.0A

Rise Time, nS: 0

Package: TO264

FGL35N120FTD Transistor Equivalent Substitute - IGBT Cross-Reference Search

FGL35N120FTD PDF doc:

1.1. fgl35n120ftd.pdf Size:727K _fairchild_semi

FGL35N120FTD
FGL35N120FTD

February 2010 FGL35N120FTD tm 1200V, 35A Trench IGBT Features General Description • Field Stop Trench Technology Using advanced field stop trench technology, Fairchild’s 1200V trench IGBTs offer superior conduction and switching perfor- • High Speed Switching mances, and easy parallel operation with exceptional avalanche • Low Saturation Voltage: VCE(sat) = 1.68 V @ IC = 35A ruggedness.

Datasheet: FGH50N3 , FGH60N60SF , FGH60N60SFD , FGH60N60SMD , FGH60N60UFD , FGH75N60UF , FGH80N60FD , FGH80N60FD2 , RJP30H1DPD , FGL60N100BNTD , FGP20N60UFD , FGP5N60LS , FGPF4533 , FGPF4536 , FGPF4633 , FGPF50N33BT , FGY75N60SMD .

 


FGL35N120FTD
  FGL35N120FTD
  FGL35N120FTD
  FGL35N120FTD
 
FGL35N120FTD
  FGL35N120FTD
  FGL35N120FTD
  FGL35N120FTD
 

social 

LIST

Last Update

IGBT: DM2G400SH6N | DM2G400SH6A | DM2G300SH6NE | DM2G300SH6A | DM2G300SH12A | DM2G200SH6N | DM2G200SH6A | DM2G200SH12AE | DM2G200SH12A | DM2G150SH6NE |

Enter a full or partial SMD code with a minimum of 2 letters or numbers