FGL60N100BNTD IGBT Transistor Datasheet. Parameters and Characteristics.

Type Designator: FGL60N100BNTD

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W:

Maximum collector-emitter voltage |Uce|, V: 1000V

Collector-emitter saturation voltage |Ucesat|, V: 2.5V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 42.0A

Maximum junction temperature (Tj), °C:

Rise time, nS: 0

Maximum collector capacity (Cc), pF:

Package: TO264

Equivalent transistors for FGL60N100BNTD

FGL60N100BNTD PDF document for downloads:

1.1. fgl60n100bntd.pdf Size:520K _fairchild_semi

IGBT FGL60N100BNTD NPT-Trench IGBT General Description Features Trench insulated gate bipolar transistors (IGBTs) with NPT • High Speed Switching technology show outstanding performance in conduction • Low Saturation Voltage : VCE(sat) = 2.5 V @ IC = 60A and switching characteristics as well as enhanced • High Input Impedance avalanche ruggedness. These devices are well suited for • Built-in Fast Recovery Diode Induction Heating ( I-H ) applications Application Micro- Wave Oven, I-H Cooker, I-H Jar, Induction Heater, Home Appliance C C G G TO-264 E E G C E Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Description FGL60N100BNTD Units VCES Collector-Emitter Voltage 1000 V VGES Gate-Emitter Voltage ± 25 V Collector Current @ TC = 25°C60 A IC Collector Current @ TC = 100°C42 A ICM (1) Pulsed Collector Current 200 A IF Diode Continuous Forward Current @ TC = 100°C15 A IFM Diode Maximum Forward Current 200 A PD Maximum Power Dissipation @ TC

See also transistors datasheet: FGH60N60SF , FGH60N60SFD , FGH60N60SMD , FGH60N60UFD , FGH75N60UF , FGH80N60FD , FGH80N60FD2 , FGL35N120FTD , 12N60C3D , FGP20N60UFD , FGP5N60LS , FGPF4533 , FGPF4536 , FGPF4633 , FGPF50N33BT , FGY75N60SMD , SGF23N60UF .

Keywords