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FGL60N100BNTD IGBT (IC) Datasheet. Cross Reference Search. FGL60N100BNTD Equivalent

Type Designator: FGL60N100BNTD

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W:

Maximum Collector-Emitter Voltage |Vce|, V: 1000V

Collector-Emitter saturation Voltage |Vcesat|, V: 2.5V

Maximum Gate-Emitter Voltage |Veg|, V:

Maximum Collector Current |Ic|, A: 42.0A

Maximum Junction Temperature (Tj), °C:

Rise Time, nS: 0

Maximum Collector Capacity (Cc), pF:

Package: TO264

FGL60N100BNTD Transistor Equivalent Substitute - IGBT Cross-Reference Search

FGL60N100BNTD PDF doc:

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FGL60N100BNTD
FGL60N100BNTD

IGBT FGL60N100BNTD NPT-Trench IGBT General Description Features Trench insulated gate bipolar transistors (IGBTs) with NPT High Speed Switching technology show outstanding performance in conduction Low Saturation Voltage : VCE(sat) = 2.5 V @ IC = 60A and switching characteristics as well as enhanced High Input Impedance avalanche ruggedness. These devices are well suited for Built

See also transistors datasheet: FGH60N60SF , FGH60N60SFD , FGH60N60SMD , FGH60N60UFD , FGH75N60UF , FGH80N60FD , FGH80N60FD2 , FGL35N120FTD , IKW50N60H3 , FGP20N60UFD , FGP5N60LS , FGPF4533 , FGPF4536 , FGPF4633 , FGPF50N33BT , FGY75N60SMD , SGF23N60UF .

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IGBT: IXXH60N65C4 | IXXH60N65B4H1 | IXXH60N65B4 | IXXH40N65B4H1 | IXXH40N65B4 | IXXH30N65B4 | IXXH30N60C3 | IXXH30N60B3 | IXXH150N60C3 | IXXH110N65C4 |

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