FGPF4533 IGBT Transistor Datasheet. Parameters and Characteristics.

Type Designator: FGPF4533

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W:

Maximum collector-emitter voltage |Uce|, V: 330V

Collector-emitter saturation voltage |Ucesat|, V: 1.55V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 50.0A

Maximum junction temperature (Tj), °C:

Rise time, nS: 0

Maximum collector capacity (Cc), pF:

Package: TO220F

Equivalent transistors for FGPF4533

FGPF4533 PDF document for downloads:

1.1. fgpf4533.pdf Size:313K _fairchild_semi

August 2010 FGPF4533 330V, PDP IGBT Features General Description • High current capability Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applica- • Low saturation voltage: VCE (sat) =1.55 V @ IC = 50 A tions where low conduction and switching losses are essential. • High input impedance • Fast switching • RoHS compliant Applications • PDP System TO-220F G C E (Retractable) Absolute Maximum Ratings Symbol Description Ratings Units VCES Collector to Emitter Voltage 330 V VGES Gate to Emitter Voltage ± 30 V @ TC = 25oC 200 A IC pulse(1)* Collector Current Maximum Power Dissipation @ TC = 25oC 28.4 W PD Maximum Power Dissipation @ TC = 100oC 11.4 W o TJ Operating Junction Temperature -55 to +150 C o Tstg Storage Temperature Range -55 to +150 C Maximum Lead Temp. for soldering o TL 300 C Purposes, 1/8” from case for 5 seconds Thermal Characteristics Symbol Parameter Typ. Max. Units

3.1. fgpf4536.pdf Size:713K _fairchild_semi

August 2010 FGPF4536 360V, PDP IGBT Features General Description • High current capability Using Novel Trench IGBT Technology, Fairchild’s new series of • Low saturation voltage: VCE (sat) =1.59 V @ IC = 50 A trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are • High input impedance essential. • Fast switching • RoHS compliant Application • PDP System TO-220F G C E (Retractable) Absolute Maximum Ratings Symbol Description Ratings Units VCES Collector to Emitter Voltage 360 V VGES Gate to Emitter Voltage ± 30 V @ TC = 25oC220 A IC pulse(1)* Pulsed Collector Current Maximum Power Dissipation @ TC = 25oC 28.4 W PD Maximum Power Dissipation @ TC = 100oC11.4 W o TJ Operating Junction Temperature -55 to +150 C o Tstg Storage Temperature Range -55 to +150 C Maximum Lead Temp. for soldering o TL 300 C Purposes, 1/8” from case for 5 seconds Thermal Characteristics Symbol Parameter Typ. Max. Units o

5.1. fgpf4633.pdf Size:419K _fairchild_semi

August 2010 FGPF4633 330V PDP IGBT Features General Description • High current capability Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applica- • Low saturation voltage: VCE(sat) = 1.55 V @ IC = 70A tions where low conduction and switching losses are essential. • High input impedance • Fast switching • RoHS compliant Applications • PDP System TO-220F G C E (Retractable) Absolute Maximum Ratings Symbol Description Ratings Units VCES Collector to Emitter Voltage 330 V VGES Gate to Emitter Voltage ± 30 V @ TC = 25oC 300 A IC pulse(1)* Collector Current Maximum Power Dissipation @ TC = 25oC 30.5 W PD Maximum Power Dissipation @ TC = 100oC 12.2 W o TJ Operating Junction Temperature -55 to +150 C o Tstg Storage Temperature Range -55 to +150 C Maximum Lead Temp. for soldering o TL 300 C Purposes, 1/8” from case for 5 seconds Thermal Characteristics Symbol Parameter Typ. Max. Units o

See also transistors datasheet: FGH60N60UFD , FGH75N60UF , FGH80N60FD , FGH80N60FD2 , FGL35N120FTD , FGL60N100BNTD , FGP20N60UFD , FGP5N60LS , G7N60C , FGPF4536 , FGPF4633 , FGPF50N33BT , FGY75N60SMD , SGF23N60UF , SGP10N60RUFD , SGS5N150UF , NGB15N41CLT4 .

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