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FGPF50N33BT IGBT. Datasheet pdf. Equivalent

Type Designator: FGPF50N33BT

Type of IGBT Channel: N-Channel

Maximum Collector-Emitter Voltage |Vce|, V: 330V

Collector-Emitter saturation Voltage |Vcesat|, V: 1.6V

Maximum Collector Current |Ic|, A: 50.0A

Rise Time, nS: 0

Package: TO220F

FGPF50N33BT Transistor Equivalent Substitute - IGBT Cross-Reference Search

FGPF50N33BT PDF doc:

1.1. fgpf50n33bt.pdf Size:655K _fairchild_semi

FGPF50N33BT
FGPF50N33BT

April 2009 FGPF50N33BT tm 330V, 50A PDP IGBT Features General Description • High current capability Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applica- • Low saturation voltage: VCE(sat) =1.6V @ IC = 50A tions where low conduction and switching losses are essential. • High input impedance • Fast switching Application

Datasheet: FGH80N60FD2 , FGL35N120FTD , FGL60N100BNTD , FGP20N60UFD , FGP5N60LS , FGPF4533 , FGPF4536 , FGPF4633 , RJH60F5DPK , FGY75N60SMD , SGF23N60UF , SGP10N60RUFD , SGS5N150UF , NGB15N41CLT4 , NGB18N40CLB , NGB8202A , NGB8202N .

 


FGPF50N33BT
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FGPF50N33BT
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  FGPF50N33BT
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