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FGPF50N33BT IGBT (IC) Datasheet. Cross Reference Search. FGPF50N33BT Equivalent

Type Designator: FGPF50N33BT

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W:

Maximum collector-emitter voltage |Uce|, V: 330V

Collector-emitter saturation voltage |Ucesat|, V: 1.6V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 50.0A

Maximum junction temperature (Tj), °C:

Rise time, nS: 0

Maximum collector capacity (Cc), pF:

Package: TO220F

FGPF50N33BT Transistor Equivalent Substitute - IGBT Cross-Reference Search

FGPF50N33BT PDF doc:

1.1. fgpf50n33bt.pdf Size:655K _fairchild_semi

FGPF50N33BT
FGPF50N33BT

April 2009 FGPF50N33BT tm 330V, 50A PDP IGBT Features General Description High current capability Using Novel Trench IGBT Technology, Fairchilds new series of trench IGBTs offer the optimum performance for PDP applica- Low saturation voltage: VCE(sat) =1.6V @ IC = 50A tions where low conduction and switching losses are essential. High input impedance Fast switching Application

See also transistors datasheet: FGH80N60FD2 , FGL35N120FTD , FGL60N100BNTD , FGP20N60UFD , FGP5N60LS , FGPF4533 , FGPF4536 , FGPF4633 , RJH60F5DPK , FGY75N60SMD , SGF23N60UF , SGP10N60RUFD , SGS5N150UF , NGB15N41CLT4 , NGB18N40CLB , NGB8202A , NGB8202N .

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