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FGY75N60SMD IGBT (IC) Datasheet. Cross Reference Search. FGY75N60SMD Equivalent

Type Designator: FGY75N60SMD

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W:

Maximum collector-emitter voltage |Uce|, V: 600V

Collector-emitter saturation voltage |Ucesat|, V: 1.9V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 75.0A

Maximum junction temperature (Tj), °C:

Rise time, nS: 0

Maximum collector capacity (Cc), pF:

Package: Power-247

FGY75N60SMD Transistor Equivalent Substitute - IGBT Cross-Reference Search

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See also transistors datasheet: FGL35N120FTD , FGL60N100BNTD , FGP20N60UFD , FGP5N60LS , FGPF4533 , FGPF4536 , FGPF4633 , FGPF50N33BT , RJP30H1DPP-M0 , SGF23N60UF , SGP10N60RUFD , SGS5N150UF , NGB15N41CLT4 , NGB18N40CLB , NGB8202A , NGB8202N , NGB8204N .

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 FGY75N60SMD - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


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IGBT: IRGP4263 | AP50G60SW | NGTB60N60SWG | NGTB60N60S | NGTG15N120FL2WG | NGTG15N120FL2 | NGTB15N120FL2WG | NGTB15N120FL2 | RJH1CV6DPK | MM60G60B |

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