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SGF23N60UF IGBT (IC) Datasheet. Cross Reference Search. SGF23N60UF Equivalent

Type Designator: SGF23N60UF

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W:

Maximum collector-emitter voltage |Uce|, V: 600V

Collector-emitter saturation voltage |Ucesat|, V: 2.1V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 12.0A

Maximum junction temperature (Tj), °C:

Rise time, nS: 0

Maximum collector capacity (Cc), pF:

Package: TO3PF

SGF23N60UF Transistor Equivalent Substitute - IGBT Cross-Reference Search

SGF23N60UF PDF doc:

1.1. sgf23n60uf.pdf Size:543K _fairchild_semi

SGF23N60UF
SGF23N60UF

1.2. sgf23n60uf.pdf Size:541K _igbt

SGF23N60UF
SGF23N60UF

October 2001 IGBT SGF23N60UF Ultra-Fast IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor(IGBT) UF • High Speed Switching series provides low conduction and switching losses. • Low Saturation Voltage : VCE(sat) = 2.1 V @ IC = 12A UF series is designed for the applications such as motor • High Input Impedance control and general inverters where High

See also transistors datasheet: FGL60N100BNTD , FGP20N60UFD , FGP5N60LS , FGPF4533 , FGPF4536 , FGPF4633 , FGPF50N33BT , FGY75N60SMD , HGTG30N60A4 , SGP10N60RUFD , SGS5N150UF , NGB15N41CLT4 , NGB18N40CLB , NGB8202A , NGB8202N , NGB8204N , NGB8206A .

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