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SGS5N150UF IGBT (IC) Datasheet. Cross Reference Search. SGS5N150UF Equivalent

Type Designator: SGS5N150UF

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W:

Maximum collector-emitter voltage |Uce|, V: 1500V

Collector-emitter saturation voltage |Ucesat|, V: 4.7V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 5.0A

Maximum junction temperature (Tj), °C:

Rise time, nS: 0

Maximum collector capacity (Cc), pF:

Package: TO220F

SGS5N150UF Transistor Equivalent Substitute - IGBT Cross-Reference Search

SGS5N150UF PDF doc:

1.1. sgs5n150uf.pdf Size:289K _fairchild_semi

SGS5N150UF
SGS5N150UF

5.1. sgs5n60rufd.pdf Size:614K _fairchild_semi

SGS5N150UF
SGS5N150UF

See also transistors datasheet: FGP5N60LS , FGPF4533 , FGPF4536 , FGPF4633 , FGPF50N33BT , FGY75N60SMD , SGF23N60UF , SGP10N60RUFD , 12N60C3D , NGB15N41CLT4 , NGB18N40CLB , NGB8202A , NGB8202N , NGB8204N , NGB8206A , NGB8206N , NGB8207AN .

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