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NGB15N41CLT4 IGBT (IC) Datasheet. Cross Reference Search. NGB15N41CLT4 Equivalent

Type Designator: NGB15N41CLT4

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 107W

Maximum Collector-Emitter Voltage |Vce|, V: 410V

Collector-Emitter saturation Voltage |Vcesat|, V: 1.9V

Maximum Gate-Emitter Voltage |Veg|, V:

Maximum Collector Current |Ic|, A: 15A

Maximum Junction Temperature (Tj), °C:

Rise Time, nS: 0

Maximum Collector Capacity (Cc), pF:

Package: D2PAK-3

NGB15N41CLT4 Transistor Equivalent Substitute - IGBT Cross-Reference Search

NGB15N41CLT4 PDF doc:

1.1. ngd15n41cl_ngb15n41cl_ngp15n41cl.pdf Size:167K _onsemi

NGB15N41CLT4
NGB15N41CLT4

NGD15N41CL, NGB15N41CL, NGP15N41CL Preferred Device Ignition IGBT 15 Amps, 410 Volts http://onsemi.com N-Channel DPAK, D2PAK and TO-220 15 AMPS This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped 410 VOLTS protection for use in inductive coil drivers applications. Primary uses VCE(on) 3 2.1 V @ include Igni

2.1. ngb15n41a.pdf Size:146K _igbt

NGB15N41CLT4
NGB15N41CLT4

NGD15N41CL, NGD15N41ACL, NGB15N41CL, NGB15N41ACL, NGP15N41CL, NGP15N41ACL http://onsemi.com Ignition IGBT 15 A, 410 V 15 AMPS N-Channel DPAK, D2PAK and TO-220 410 VOLTS This Logic Level Insulated Gate Bipolar Transistor (IGBT) features VCE(on) 3 2.1 V @ monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary

See also transistors datasheet: FGPF4533 , FGPF4536 , FGPF4633 , FGPF50N33BT , FGY75N60SMD , SGF23N60UF , SGP10N60RUFD , SGS5N150UF , IRG4PC40W , NGB18N40CLB , NGB8202A , NGB8202N , NGB8204N , NGB8206A , NGB8206N , NGB8207AN , NGB8207N .

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IGBT: IXXH60N65C4 | IXXH60N65B4H1 | IXXH60N65B4 | IXXH40N65B4H1 | IXXH40N65B4 | IXXH30N65B4 | IXXH30N60C3 | IXXH30N60B3 | IXXH150N60C3 | IXXH110N65C4 |

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