NGD18N40CLB IGBT Transistor Datasheet. Parameters and Characteristics.

Type Designator: NGD18N40CLB

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 115W

Maximum collector-emitter voltage |Uce|, V: 400V

Collector-emitter saturation voltage |Ucesat|, V: 1.8V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 18A

Maximum junction temperature (Tj), °C:

Rise time, nS: 0

Maximum collector capacity (Cc), pF:

Package: DPAK-4

Equivalent transistors for NGD18N40CLB

NGD18N40CLB PDF document for downloads:

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See also transistors datasheet: NGB8202A , NGB8202N , NGB8204N , NGB8206A , NGB8206N , NGB8207AN , NGB8207N , NGD15N41CLT4 , GT20D101 , NGD8201A , NGD8201N , NGD8205N , NGP15N41CL , FID60-06D , FII24N17AH1 , FII30-06D , FII30-12E .

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