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FII50-12E IGBT (IC) Datasheet. Cross Reference Search. FII50-12E Equivalent

Type Designator: FII50-12E

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W:

Maximum collector-emitter voltage |Uce|, V: 1200V

Collector-emitter saturation voltage |Ucesat|, V: 2V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 50A

Maximum junction temperature (Tj), °C:

Rise time, nS: 0

Maximum collector capacity (Cc), pF:

Package: ISOPLUS_i4-PAC(5-Lead)

FII50-12E Transistor Equivalent Substitute - IGBT Cross-Reference Search

FII50-12E PDF doc:

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See also transistors datasheet: NGD8201N , NGD8205N , NGP15N41CL , FID60-06D , FII24N17AH1 , FII30-06D , FII30-12E , FII40-06D , IKW50N60T(Marking Code K50T60) , IXA12IF1200HB , IXA12IF1200PB , IXA12IF1200TC , IXA17IF1200HJ , IXA20I1200PB , IXA20IF1200HB , IXA20PG1200DHGLB , IXA27IF1200HJ .

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