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CT20TM-8
IGBT Transistor Datasheet. Parameters and Characteristics. Type Designator: CT20TM-8
Type of IGBT channel: N-Channel
Maximum power dissipation (Pc) of IGBT transistor, W:
Maximum collector-emitter voltage |Uce|, V: 400V
Collector-emitter saturation voltage |Ucesat|, V: 7V
Maximum gate-emitter voltage |Ueg|, V: 40V
Maximum collector current |Ic|, A: 130A
Maximum junction temperature (Tj), °C: 150
Rise time, nS: 0
Maximum collector capacity (Cc), pF:
Package: TO220F
Equivalent transistors for CT20TM-8
CT20TM-8
PDF document for downloads: PDF unavailable! See also transistors datasheet: BUK856-400IZ
, BUK856-800A
, BUK866-400IZ
, CM75DY-28H
, CT15SM-24
, CT20AS-8
, CT20ASJ-8
, CT20ASL-8
, BUK854-800A
, CT20VM-8
, CT20VML-8
, CT20VS-8
, CT20VSL-8
, CT25AS-8
, CT25ASJ-8
, CT30SM-12
, CT30TM-8
. Keywords| CT20TM-8
Datasheet | CT20TM-8
Datenblatt | CT20TM-8
RoHS | CT20TM-8
Distributor | | CT20TM-8
Application Notes | CT20TM-8
Component | CT20TM-8
Circuit | CT20TM-8
Schematic | | CT20TM-8
Equivalent | CT20TM-8
Cross Reference | CT20TM-8
Data Sheet | CT20TM-8
Fiche Technique |
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