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IXBF9N160G IGBT. Datasheet pdf. Equivalent

Type Designator: IXBF9N160G

Type of IGBT Channel: N-Channel

Maximum Collector-Emitter Voltage |Vce|, V: 1600V

Collector-Emitter saturation Voltage |Vcesat|, V: 4.9V

Maximum Collector Current |Ic|, A: 7A

Rise Time, nS: 70

Package: ISOPLUS_i4-PAC(3-Lead)

IXBF9N160G Transistor Equivalent Substitute - IGBT Cross-Reference Search

IXBF9N160G PDF doc:

1.1. ixbf9n160g.pdf Size:82K _ixys

IXBF9N160G
IXBF9N160G

IXBF 9N160 G IC25 = 7 A High Voltage VCES = 1600 V BIMOSFETTM VCE(sat) = 4.9 V in High Voltage ISOPLUS i4-PACTM tf = 70 ans Monolithic Bipolar MOS Transistor 1 5 Features IGBT High Voltage BIMOSFETTM Symbol Conditions Maximum Ratings - substitute for high voltage MOSFETs with significantly lower voltage drop VCES TVJ = 25C to 150C 1600 V - MOSFET compatible control VGES

1.2. ixbf9n160g.pdf Size:82K _igbt

IXBF9N160G
IXBF9N160G

IXBF 9N160 G IC25 = 7 A High Voltage VCES = 1600 V BIMOSFETTM VCE(sat) = 4.9 V in High Voltage ISOPLUS i4-PACTM tf = 70 ans Monolithic Bipolar MOS Transistor 1 5 Features IGBT • High Voltage BIMOSFETTM Symbol Conditions Maximum Ratings - substitute for high voltage MOSFETs with significantly lower voltage drop VCES TVJ = 25°C to 150°C 1600 V - MOSFET compatible control

Datasheet: IXA55I1200HJ , IXA60IF1200NA , IXBF12N300 , IXBF20N300 , IXBF32N300 , IXBF40N160 , IXBF42N300 , IXBF55N300 , IRG4PC60F , IXBH10N170 , IXBH12N300 , IXBH16N170 , IXBH16N170A , IXBH20N300 , IXBH24N170 , IXBH28N170A , IXBH2N250 .

 


IXBF9N160G
  IXBF9N160G
  IXBF9N160G
  IXBF9N160G
 
IXBF9N160G
  IXBF9N160G
  IXBF9N160G
  IXBF9N160G
 

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