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IXBH9N160G IGBT (IC) Datasheet. Cross Reference Search. IXBH9N160G Equivalent

Type Designator: IXBH9N160G

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W:

Maximum collector-emitter voltage |Uce|, V: 1600V

Collector-emitter saturation voltage |Ucesat|, V: 4.9V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 9A

Maximum junction temperature (Tj), °C:

Rise time, nS: 70

Maximum collector capacity (Cc), pF:

Package: TO247AD

IXBH9N160G Transistor Equivalent Substitute - IGBT Cross-Reference Search

IXBH9N160G PDF doc:

1.1. ixbh9n160g.pdf Size:76K _igbt

IXBH9N160G
IXBH9N160G

IXBH 9N160G High Voltage BIMOSFETTM IC25 = 9 A Monolithic Bipolar VCES = 1600 V MOS Transistor VCE(sat) = 4.9 V typ. tfi = 70 ns N-Channel, Enhancement Mode C TO-247 AD MOSFET compatible G G C C (TAB) E E G = Gate, C = Collector, E = Emitter, TAB = Collector Symbol Conditions Maximum Ratings Features • High Voltage BIMOSFETTM VCES TJ = 25°C to 150°C 1600 V - replaces hig

3.1. ixbh9n140-160.pdf Size:55K _ixys

IXBH9N160G
IXBH9N160G

High Voltage BIMOSFETTM IXBH 9N140 VCES = 1400/1600 V Monolithic Bipolar IXBH 9N160 IC25 = 9 A MOS Transistor VCE(sat) = 4.9 V typ. N-Channel, Enhancement Mode tfi = 40 ns C TO-247 AD G G C C (TAB) E E G = Gate, C = Collector, E = Emitter, TAB = Collector Symbol Conditions Maximum Ratings Features 9N140 9N160 • International standard package VCES TJ = 25°C to 150°C 1400 160

See also transistors datasheet: IXBH28N170A , IXBH2N250 , IXBH32N300 , IXBH40N160 , IXBH42N170 , IXBH42N170A , IXBH5N160G , IXBH6N170 , FGH40N60UFD , IXBK55N300 , IXBK64N250 , IXBK75N170 , IXBK75N170A , IXBL64N250 , IXBN42N170A , IXBN75N170 , IXBN75N170A .

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