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CT20VML-8
IGBT Transistor Datasheet. Parameters and Characteristics. Type Designator: CT20VML-8
Type of IGBT channel: N-Channel
Maximum power dissipation (Pc) of IGBT transistor, W:
Maximum collector-emitter voltage |Uce|, V: 400V
Collector-emitter saturation voltage |Ucesat|, V: 2V
Maximum gate-emitter voltage |Ueg|, V: 16V
Maximum collector current |Ic|, A: 130A
Maximum junction temperature (Tj), °C: 150
Rise time, nS: 0
Maximum collector capacity (Cc), pF:
Package: TO220C
Equivalent transistors for CT20VML-8
CT20VML-8
PDF document for downloads: PDF unavailable! See also transistors datasheet: BUK866-400IZ
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. Keywords| CT20VML-8
Datasheet | CT20VML-8
Datenblatt | CT20VML-8
RoHS | CT20VML-8
Distributor | | CT20VML-8
Application Notes | CT20VML-8
Component | CT20VML-8
Circuit | CT20VML-8
Schematic | | CT20VML-8
Equivalent | CT20VML-8
Cross Reference | CT20VML-8
Data Sheet | CT20VML-8
Fiche Technique |
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