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IXDR30N120D1
IGBT Transistor Datasheet. Parameters and Characteristics. Type Designator: IXDR30N120D1
Type of IGBT channel: N-Channel
Maximum power dissipation (Pc) of IGBT transistor, W:
Maximum collector-emitter voltage |Uce|, V: 1200V
Collector-emitter saturation voltage |Ucesat|, V: 2.9V
Maximum gate-emitter voltage |Ueg|, V:
Maximum collector current |Ic|, A: 50A
Maximum junction temperature (Tj), °C:
Rise time, nS: 70
Maximum collector capacity (Cc), pF:
Package: ISOPLUS247
Equivalent transistors for IXDR30N120D1
IXDR30N120D1
PDF document for downloads: PDF unavailable! See also transistors datasheet: IXBX75N170
, IXBX75N170A
, IXDH35N60B
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, 14N36GVL
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, IXEH40N120D1
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, IXEN60N120D1
. Keywords| IXDR30N120D1
Datasheet | IXDR30N120D1
Datenblatt | IXDR30N120D1
RoHS | IXDR30N120D1
Distributor | | IXDR30N120D1
Application Notes | IXDR30N120D1
Component | IXDR30N120D1
Circuit | IXDR30N120D1
Schematic | | IXDR30N120D1
Equivalent | IXDR30N120D1
Cross Reference | IXDR30N120D1
Data Sheet | IXDR30N120D1
Fiche Technique |
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