IXEH40N120D1 IGBT Transistor Datasheet. Parameters and Characteristics.

Type Designator: IXEH40N120D1

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W:

Maximum collector-emitter voltage |Uce|, V: 1200V

Collector-emitter saturation voltage |Ucesat|, V: 3V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 60A

Maximum junction temperature (Tj), °C:

Rise time, nS: 50

Maximum collector capacity (Cc), pF:

Package: TO247

Equivalent transistors for IXEH40N120D1

IXEH40N120D1 PDF document for downloads:

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See also transistors datasheet: IXDP20N60BD1 , IXDP35N60B , IXDR30N120 , IXDR30N120D1 , IXDR35N60BD1 , IXEH25N120 , IXEH25N120D1 , IXEH40N120 , IRGB4060D , IXEL40N400 , IXEN60N120 , IXEN60N120D1 , IXER20N120 , IXER20N120D1 , IXER35N120D1 , IXER60N120 , IXGA12N120A2 .

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