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CT25ASJ-8
IGBT Transistor Datasheet. Parameters and Characteristics. Type Designator: CT25ASJ-8
Type of IGBT channel: N-Channel
Maximum power dissipation (Pc) of IGBT transistor, W:
Maximum collector-emitter voltage |Uce|, V: 400V
Collector-emitter saturation voltage |Ucesat|, V: 4V
Maximum gate-emitter voltage |Ueg|, V: 16V
Maximum collector current |Ic|, A: 150A
Maximum junction temperature (Tj), °C: 150
Rise time, nS: 0
Maximum collector capacity (Cc), pF:
Package: MP3
Equivalent transistors for CT25ASJ-8
CT25ASJ-8
PDF document for downloads: PDF unavailable! See also transistors datasheet: CT20ASJ-8
, CT20ASL-8
, CT20TM-8
, CT20VM-8
, CT20VML-8
, CT20VS-8
, CT20VSL-8
, CT25AS-8
, IRG4PC40W
, CT30SM-12
, CT30TM-8
, CT30VM-8
, CT30VS-8
, CT35SM-8
, CT40TMH-8
, CT60AM-18B
, CT60AM-18F
. Keywords| CT25ASJ-8
Datasheet | CT25ASJ-8
Datenblatt | CT25ASJ-8
RoHS | CT25ASJ-8
Distributor | | CT25ASJ-8
Application Notes | CT25ASJ-8
Component | CT25ASJ-8
Circuit | CT25ASJ-8
Schematic | | CT25ASJ-8
Equivalent | CT25ASJ-8
Cross Reference | CT25ASJ-8
Data Sheet | CT25ASJ-8
Fiche Technique |
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