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IXER35N120D1
IGBT Transistor Datasheet. Parameters and Characteristics. Type Designator: IXER35N120D1
Type of IGBT channel: N-Channel
Maximum power dissipation (Pc) of IGBT transistor, W:
Maximum collector-emitter voltage |Uce|, V: 1200V
Collector-emitter saturation voltage |Ucesat|, V: 2.8V
Maximum gate-emitter voltage |Ueg|, V:
Maximum collector current |Ic|, A: 50A
Maximum junction temperature (Tj), °C:
Rise time, nS: 50
Maximum collector capacity (Cc), pF:
Package: ISOPLUS247
Equivalent transistors for IXER35N120D1
IXER35N120D1
PDF document for downloads: PDF unavailable! See also transistors datasheet: IXEH25N120D1
, IXEH40N120
, IXEH40N120D1
, IXEL40N400
, IXEN60N120
, IXEN60N120D1
, IXER20N120
, IXER20N120D1
, IXYH82N120C3
, IXER60N120
, IXGA12N120A2
, IXGA12N120A3
, IXGA12N60B
, IXGA14N120B
, IXGA15N120B2
, IXGA16N60B2
, IXGA16N60B2D1
. Keywords| IXER35N120D1
Datasheet | IXER35N120D1
Datenblatt | IXER35N120D1
RoHS | IXER35N120D1
Distributor | | IXER35N120D1
Application Notes | IXER35N120D1
Component | IXER35N120D1
Circuit | IXER35N120D1
Schematic | | IXER35N120D1
Equivalent | IXER35N120D1
Cross Reference | IXER35N120D1
Data Sheet | IXER35N120D1
Fiche Technique |
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