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CT30VS-8
IGBT Transistor Datasheet. Parameters and Characteristics. Type Designator: CT30VS-8
Type of IGBT channel: N-Channel
Maximum power dissipation (Pc) of IGBT transistor, W:
Maximum collector-emitter voltage |Uce|, V: 400V
Collector-emitter saturation voltage |Ucesat|, V: 7V
Maximum gate-emitter voltage |Ueg|, V: 40V
Maximum collector current |Ic|, A: 180A
Maximum junction temperature (Tj), °C: 150
Rise time, nS: 0
Maximum collector capacity (Cc), pF:
Package: TO220S
Equivalent transistors for CT30VS-8
CT30VS-8
PDF document for downloads: PDF unavailable! See also transistors datasheet: CT20VML-8
, CT20VS-8
, CT20VSL-8
, CT25AS-8
, CT25ASJ-8
, CT30SM-12
, CT30TM-8
, CT30VM-8
, IRGB20B60PD1
, CT35SM-8
, CT40TMH-8
, CT60AM-18B
, CT60AM-18F
, CT60AM-20
, CT75AM-12
, CY20AAJ-8
, CY25AAJ-8
. Keywords| CT30VS-8
Datasheet | CT30VS-8
Datenblatt | CT30VS-8
RoHS | CT30VS-8
Distributor | | CT30VS-8
Application Notes | CT30VS-8
Component | CT30VS-8
Circuit | CT30VS-8
Schematic | | CT30VS-8
Equivalent | CT30VS-8
Cross Reference | CT30VS-8
Data Sheet | CT30VS-8
Fiche Technique |
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