IXGH10N170 IGBT Transistor Datasheet. Parameters and Characteristics.

Type Designator: IXGH10N170

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W:

Maximum collector-emitter voltage |Uce|, V: 1700V

Collector-emitter saturation voltage |Ucesat|, V: 4V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 20A

Maximum junction temperature (Tj), °C:

Rise time, nS: 495

Maximum collector capacity (Cc), pF:

Package: TO247

Equivalent transistors for IXGH10N170

IXGH10N170 PDF document for downloads:

1.1. ixgh10n170a_ixgt10n170a.pdf Size:565K _ixys

IXGH 10N170A VCES = 1700 V High Voltage IXGT 10N170A IC25 = 10 A IGBT VCE(sat) = 6.0 V tfi(typ) = 35 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 M? 1700 V G VGES Continuous ±20 V E C (TAB) VGEM Transient ±30 V IC25 TC = 25°C10 A TO-247 AD (IXGH) IC90 TC = 90°C5 A ICM TC = 25°C, 1 ms 20 A SSOA VGE = 15 V, TVJ = 125°C, RG = 22? ICM = 20 A C (TAB) (RBSOA) Clamped inductive load @ 0.8 VCES G C E tSC TJ = 125°C, VCE = 1200 V; VGE = 15 V, RG = 22? 10 µs G = Gate, C = Collector, E = Emitter, TAB = Collector PC TC = 25°C 140 W TJ -55 ... +150 °C Features TJM 150 °C International standard packages Tstg -55 ... +150 °C JEDEC TO-268 and JEDEC TO-247 AD Md Mounting torque (M3) (TO-247) 1.13/10Nm/lb.in. High current handling capability Very high frequency Maximum lead temperature for soldering 300 °C MOS Gate turn-on 1.6 mm (0.062 in.) from case f

3.1. ixgp10n60-a_ixga10n60-a_ixgh10n60-a.pdf Size:56K _ixys

Preliminary data VCES IC25 VCE(sat) Low VCE(sat) IGBT IXGA/IXGP/IXGH10N60 600 V 20 A 2.5 V High speed IGBT IXGA/IXGP/IXGH10N60A 600 V 20 A 3.0 V TO-220AB(IXGP) Symbol Test Conditions Maximum Ratings G C E VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 M? 600 V TO-263 AA (IXGA) VGES Continuous ±20 V VGEM Transient ±30 V G IC25 TC = 25°C20 A C (TAB) E IC90 TC = 90°C10 A ICM TC = 25°C, 1 ms 40 A TO-247 AD (IXGH) SSOA VGE= 15 V, TVJ = 125°C, RG = 150 ? ICM = 20 A (RBSOA) Clamped inductive load, L = 300 µH @ 0.8 VCES PC TC = 25°C 100 W C (TAB) G TJ -55 ... +150 °C C E TJM 150 °C G = Gate, C = Collector, Tstg -55 ... +150 °C E = Emitter, TAB = Collector Maximum Lead and Tab temperature for soldering 300 °C 1.6 mm (0.062 in.) from case for 10 s Features International standard packages Md Mounting torque, TO-247 AD 1.13/10 Nm/lb.in. JEDEC TO-263 AA surface Weight TO-263 AA 2 g mountable and JEDEC TO-247 AD TO-247 AD 6 g 2nd generation

3.2. ixgh10n300.pdf Size:226K _ixys

Advance Technical Information High Voltage IGBT VCES = 3000V IXGH10N300 IC90 = 10A ? ? VCE(sat) ? 3.5V ? ? For Capacitor Discharge Applications TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1M? 3000 V G (TAB) VGES Continuous ±20 V C E VGEM Transient ±30 V IC25 TC = 25°C 18 A G = Gate C = Collector IC90 TC = 90°C 10 A E = Emitter TAB = Collector ICM TC = 25°C, 1ms 40 A SSOA VGE= 20V, TVJ = 125°C, RG = 50? ICM = 32 A (RBSOA) Clamped Inductive Load @ ? 1250 V PC TC = 25°C 100 W Features TJ -55 ... +150 °C TJM 150 °C High Peak Current Capability Tstg -55 ... +150 °C Low Saturation Voltage TL Maximum Lead Temperature for Soldering 300 °C Low Gate Drive Requirement TSOLD 1.6 mm (0.062in.) from Case for 10s 260 °C Molding Epoxies Meet UL 94 V-0 Flammability Classification Md Mounting Torque 1.13/10 Nm/lb.in. Weight 6g Applications Capacitor Discharge Pulser

See also transistors datasheet: IXGF20N300 , IXGF25N250 , IXGF25N300 , IXGF30N400 , IXGF32N170 , IXGF36N300 , IXGH100N30B3 , IXGH100N30C3 , IHY20N120R3 , IXGH10N170A , IXGH10N300 , IXGH120N30B3 , IXGH120N30C3 , IXGH12N120A3 , IXGH15N120B2D1 , IXGH16N170 , IXGH16N170A .

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