All IGBT. IXGH15N120B2D1 Datasheet

 

IXGH15N120B2D1 IGBT. Datasheet pdf. Equivalent

Type Designator: IXGH15N120B2D1

Type of IGBT Channel: N-Channel

Maximum Collector-Emitter Voltage |Vce|, V: 1200V

Collector-Emitter saturation Voltage |Vcesat|, V: 3.3V

Maximum Collector Current |Ic|, A: 30A

Rise Time, nS: 137

Package: TO247

IXGH15N120B2D1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

IXGH15N120B2D1 PDF doc:

1.1. ixgh15n120b_ixgt15n120b.pdf Size:529K _ixys

IXGH15N120B2D1
IXGH15N120B2D1

IXGH 15N120B VCES = 1200 V HiPerFASTTM IGBT IXGT 15N120B IC25 = 30 A VCE(sat) = 3.2 V tfi(typ) = 160 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25C to 150C 1200 V VCGR TJ = 25C to 150C; RGE = 1 M? 1200 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25C30 A TO-247 AD (IXGH) IC110 TC = 110C15 A ICM TC = 25C, 1 ms 60 A SSOA VGE = 15

1.2. ixgh15n120bd1.pdf Size:60K _igbt

IXGH15N120B2D1
IXGH15N120B2D1

Low VCE(sat) IGBT with Diode VDSS IC25 VCE(sat) High Speed IGBT with Diode IXGH/IXGT 15N120BD1 1200 V 30 A 3.2 V IXGH/IXGT 15N120CD1 1200 V 30 A 3.8 V Preliminary data Symbol Test Conditions Maximum Ratings TO-247AD (IXGH) VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V G VGES Continuous ±20 V C E TAB VGEM Transient ±30 V IC25 TC = 25°C30 A TO-2

1.3. ixgh15n120b2d1.pdf Size:66K _igbt

IXGH15N120B2D1
IXGH15N120B2D1

Advance Technical Information VCES =1200 V IXGH15N120B2D1 HiPerFASTTM IGBT IC25 = 30 A IXGT15N120B2D1 VCE(sat) = 3.3 V Optimized for 10-20 KHz hard tfi(typ) = 137 ns switching and up to 100 KHz resonant switching Symbol Test Conditions Maximum Ratings TO-247AD VCES TJ = 25°C to 150°C 1200 V (IXGH) VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V G TAB C

1.4. ixgh15n120c.pdf Size:52K _igbt

IXGH15N120B2D1
IXGH15N120B2D1

IXGH 15N120C VCES = 1200 V IGBT IXGT 15N120C IC25 = 30 A VCE(sat) = 3.8 V Lightspeed Series tfi(typ) = 115 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V G VGES Continuous ±20 V E VGEM Transient ±30 V (TAB) IC25 TC = 25°C30 A IC90 TC = 90°C15 A TO-247 AD (IXGH) ICM TC =

1.5. ixgh15n120b.pdf Size:170K _igbt

IXGH15N120B2D1
IXGH15N120B2D1

IXGH 15N120B VCES = 1200 V HiPerFASTTM IGBT IXGT 15N120B IC25 = 30 A VCE(sat) = 3.2 V tfi(typ) = 160 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V G VGES Continuous ±20 V E C (TAB) VGEM Transient ±30 V IC25 TC = 25°C30 A TO-247 AD (IXGH) IC110 TC = 110°C15 A ICM TC = 25°C, 1 ms 60 A

1.6. ixgh15n120cd1.pdf Size:60K _igbt

IXGH15N120B2D1
IXGH15N120B2D1

Low VCE(sat) IGBT with Diode VDSS IC25 VCE(sat) High Speed IGBT with Diode IXGH/IXGT 15N120BD1 1200 V 30 A 3.2 V IXGH/IXGT 15N120CD1 1200 V 30 A 3.8 V Preliminary data Symbol Test Conditions Maximum Ratings TO-247AD (IXGH) VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V G VGES Continuous ±20 V C E TAB VGEM Transient ±30 V IC25 TC = 25°C30 A TO-2

Datasheet: IXGH100N30B3 , IXGH100N30C3 , IXGH10N170 , IXGH10N170A , IXGH10N300 , IXGH120N30B3 , IXGH120N30C3 , IXGH12N120A3 , IKW40N120H3 , IXGH16N170 , IXGH16N170A , IXGH16N170AH1 , IXGH16N60B2D1 , IXGH16N60C2D1 , IXGH20N100A3 , IXGH20N120 , IXGH20N120A3 .

 


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IGBT: IXYK120N120C3 | IXYK100N120C3 | IXYH50N120C3D1 | IXYH40N120C3D1 | IXYH40N120C3 | IXYH40N120B3D1 | IXYH40N120B3 | IXYR100N120C3 | IXYP30N120C3 | IXYP20N120C3 |

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