All IGBT. CT60AM-18B Datasheet

 

CT60AM-18B IGBT. Datasheet pdf. Equivalent

Type Designator: CT60AM-18B

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 200W

Maximum Collector-Emitter Voltage |Vce|, V: 900V

Collector-Emitter saturation Voltage |Vcesat|, V: 2.7V

Maximum Gate-Emitter Voltage |Veg|, V: 30V

Maximum Collector Current |Ic|, A: 60A

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 50

Maximum Collector Capacity (Cc), pF: 5000pF

Package: TO3PL

CT60AM-18B Transistor Equivalent Substitute - IGBT Cross-Reference Search

CT60AM-18B PDF doc:

1.1. ct60am-18f.pdf Size:23K _mitsubishi

CT60AM-18B
CT60AM-18B

MITSUBISHI Nch IGBT CT60AM-18F INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18F OUTLINE DRAWING Dimensions in mm 5 20MAX. 2 ?3.2 2 1 0.5 3 5.45 5.45 4.0 VCES ............................................................................... 900V IC .........................................................................................60A GATE Simple drive COLLECTOR EMITTER In

Datasheet: CT25AS-8 , CT25ASJ-8 , CT30SM-12 , CT30TM-8 , CT30VM-8 , CT30VS-8 , CT35SM-8 , CT40TMH-8 , HGTG30N60A4D , CT60AM-18F , CT60AM-20 , CT75AM-12 , CY20AAJ-8 , CY25AAJ-8 , G10N40 , G10N40C1 , G10N40E1 .

 


CT60AM-18B
  CT60AM-18B
  CT60AM-18B
  CT60AM-18B
 
CT60AM-18B
  CT60AM-18B
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  CT60AM-18B
 

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IGBT: VS-GT75NP120N | VS-GT50TP60N | VS-GT50TP120N | VS-GT400TH60N | VS-GT400TH120U | VS-GT400TH120N | VS-GT300YH120N | VS-GT300FD060N | VS-GT175DA120U | VS-GT140DA60U |

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