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IXGH28N120BD1 IGBT (IC) Datasheet. Cross Reference Search. IXGH28N120BD1 Equivalent

Type Designator: IXGH28N120BD1

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W:

Maximum collector-emitter voltage |Uce|, V: 1200V

Collector-emitter saturation voltage |Ucesat|, V: 3.5V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 50A

Maximum junction temperature (Tj), °C:

Rise time, nS: 170

Maximum collector capacity (Cc), pF:

Package: TO247

IXGH28N120BD1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

IXGH28N120BD1 PDF doc:

1.1. ixgh28n120b_ixgt28n120b.pdf Size:575K _ixys

IXGH28N120BD1
IXGH28N120BD1

IXGH 28N120B VCES = 1200 V High Voltage IGBT IXGT 28N120B IC25 = 50 A VCE(sat) = 3.5 V tfi(typ) = 160 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25C to 150C 1200 V VCGR TJ = 25C to 150C; RGE = 1 M? 1200 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25C50 A TO-247 AD (IXGH) IC110 TC = 110C28 A ICM TC = 25C, 1 ms 150 A SSOA VGE = 15

5.1. ixgh24n170a_ixgt24n170a.pdf Size:519K _ixys

IXGH28N120BD1
IXGH28N120BD1

IXGH 24N170A VCES = 1700 V High Voltage IXGT 24N170A IC25 = 24 A IGBT VCE(sat) = 6.0 V tfi(typ) = 45 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25C to 150C 1700 V VCGR TJ = 25C to 150C; RGE = 1 M? 1700 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25C24 A TO-247 AD (IXGH) IC90 TC = 90C16 A ICM TC = 25C, 1

5.2. ixgh20n100_ixgt20n100.pdf Size:53K _ixys

IXGH28N120BD1
IXGH28N120BD1

IXGH 20N100 VCES = 1000 V IGBT IXGT 20N100 IC25 = 40 A VCE(sat) = 3.0 V tfi(typ) = 280 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25C to 150C 1000 V G VCGR TJ = 25C to 150C; RGE = 1 MW 1000 V E VGES Continuous 20 V (TAB) VGEM Transient 30 V TO-247 AD (IXGH) IC25 TC = 25C40 A IC90 TC = 90C20 A ICM TC = 25C, 1 ms 80 A SSOA VGE= 15

5.3. ixgh20n120_ixgt20n120.pdf Size:106K _ixys

IXGH28N120BD1
IXGH28N120BD1

VCES = 1200 V IXGH 20N120 IGBT IC25 = 40 A IXGT 20N120 VCE(sat) = 2.5 V tfi(typ) = 380 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25C to 150C 1200 V VCGR TJ = 25C to 150C; RGE = 1 M? 1200 V VGES Continuous 20 V VGEM Transient 30 V G D S IC25 TC = 25C40 A IC90 TC = 90C20 A TO-268 (IXGT) ICM TC = 25C, 1 ms 80 A SSOA VGE = 15

5.4. ixgh20n60-a_ixgm20n60-a.pdf Size:64K _ixys

IXGH28N120BD1
IXGH28N120BD1

VCES IC25 VCE(sat) Low VCE(sat) IGBT IXGH/IXGM 20 N60 600 V 40 A 2.5 V High speed IGBT IXGH/IXGM 20 N60A 600 V 40 A 3.0 V Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C; RGE = 1 M? 600 V VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25C40 A IC90 TC = 90C20 A TO-204 AE (IXGM) ICM TC = 25C, 1 ms 80 A SSOA VG

5.5. ixgh20n120b_ixgt20n120b.pdf Size:568K _ixys

IXGH28N120BD1
IXGH28N120BD1

IXGH 20N120B VCES = 1200 V High Voltage IGBT IXGT 20N120B IC25 = 40 A VCE(sat) = 3.4 V Preliminary Data Sheet tfi(typ) = 160 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25C to 150C 1200 V VCGR TJ = 25C to 150C; RGE = 1 M? 1200 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25C40 A TO-247 AD (IXGH) IC110 TC = 110C20 A ICM TC = 25C, 1

5.6. ixgh25n160_ixgt25n160.pdf Size:142K _ixys

IXGH28N120BD1
IXGH28N120BD1

VCES = 1600 V IXGH 25N160 High Voltage IGBT IC25 = 75 A IXGT 25N160 VCE(sat)= 2.5 V For Capacitor Discharge Applications Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25C to 150C 1600 V VCGR TJ = 25C to 150C; RGE = 1 M? 1600 V VGES Continuous 20 V G C C (TAB) VGEM Transient 30 V E IC25 TC = 25C 75 A TO-268 (IXGT) IC110 TC = 110C

5.7. ixgh24n60aui.pdf Size:117K _ixys

IXGH28N120BD1
IXGH28N120BD1

VCES = 600 V IXGH 24N60AU1 HiPerFASTTM IC25 = 48 A IXGH 24N60AU1S IGBT with Diode VCE(sat) = 2.7 V Combi Pack tfi = 275 ns TO-247 SMD (24N60AU1S) Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C; RGE = 1 M? 600 V G C (TAB) E VGES Continuous 20 V VGEM Transient 30 V TO-247 AD IC25 TC = 25C48 A (24N60AU1) IC90 TC = 90C24 A ICM TC

5.8. ixga20n120a3_ixgh20n120a3_ixgp20n120a3.pdf Size:236K _ixys

IXGH28N120BD1
IXGH28N120BD1

VCES = 1200V GenX3TM 1200V IGBTs IXGA20N120A3 IC110 = 20A IXGP20N120A3 ? VCE(sat) ? ? 2.5V ? IXGH20N120A3 ? Ultra-Low Vsat PT IGBTs for up to 3 kHz Switching TO-263 AA (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25C to 150C 1200 V VCGR TJ = 25C to 150C, RGE = 1M? 1200 V VGES Continuous 20 V VGEM Transient 30 V G C C (Tab) E IC2

See also transistors datasheet: IXGH24N170 , IXGH24N170A , IXGH24N170AH1 , IXGH24N60C4 , IXGH24N60C4D1 , IXGH25N160 , IXGH25N250 , IXGH28N120B , SKW30N60HS , IXGH28N140B3H1 , IXGH28N60B3D1 , IXGH28N60BD1 , IXGH2N250 , IXGH30N120B3 , IXGH30N120B3D1 , IXGH30N120C3H1 , IXGH30N60B2 .

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