IGBT Datasheet


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IXGH28N120BD1
  IXGH28N120BD1
  IXGH28N120BD1
 
IXGH28N120BD1
  IXGH28N120BD1
  IXGH28N120BD1
 
IXGH28N120BD1
  IXGH28N120BD1
 
 
List
10N40C1D ..APT50GF120LR
APT50GF60AR ..FGPF4533
FGPF4536 ..GT5G101
GT5G102 ..HGTD7N60B3S
HGTD7N60C3 ..HGTP7N60A4D
HGTP7N60B3 ..IKW25T120
IKW30N100T ..IRG4PH30K
IRG4PH30KD ..IRGP4066D
IRGP4066D-E ..IXDH35N60BD1
IXDN50N120AU1 ..IXGH15N120B2D1
IXGH15N120BD1 ..IXGH40N120B2D1
IXGH40N120C3 ..IXGN200N60B
IXGN200N60B3 ..IXGR55N120A3H1
IXGR60N60B2 ..IXGX320N60B3
IXGX32N170AH1 ..IXSP20N60B2D1
IXSP24N60B ..MGP7N60ED
MGS05N60D ..MIXA80R1200VA
MIXA80W1200TED ..MWI75-12T8T
MWI80-12T6K ..RJP60D0DPK
RJP60D0DPM ..SGS6N60UF
SGS6N60UFD ..SKM400GB123D
SKM400GB124D ..STGB10NB60S
STGB10NC60HD ..STGW20NC60VD
STGW25H120DF ..VWI35-06P1
 
IXGH28N120BD1 All IGBT Data Sheet. Parameters and Characteristics. IGBT Cross Reference Database.
 

IXGH28N120BD1 IGBT Transistor Datasheet. Parameters and Characteristics.

Type Designator: IXGH28N120BD1

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W:

Maximum collector-emitter voltage |Uce|, V: 1200V

Collector-emitter saturation voltage |Ucesat|, V: 3.5V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 50A

Maximum junction temperature (Tj), °C:

Rise time, nS: 170

Maximum collector capacity (Cc), pF:

Package: TO247

Equivalent transistors for IXGH28N120BD1

IXGH28N120BD1 PDF doc:

1.1. ixgh28n120b_ixgt28n120b.pdf Size:575K _ixys

IXGH28N120BD1
IXGH28N120BD1
IXGH 28N120B VCES = 1200 V High Voltage IGBT IXGT 28N120B IC25 = 50 A VCE(sat) = 3.5 V tfi(typ) = 160 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25C to 150C 1200 V VCGR TJ = 25C to 150C; RGE = 1 M? 1200 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25C50 A TO-247 AD (IXGH) IC110 TC = 110C28 A ICM TC = 25C, 1 ms 150 A SSOA VGE = 15 V, TVJ = 125C, RG = 5 ? ICM = 120 A (RBSOA) Clamped inductive load @ 0.8 VCES C (TAB) G C PC TC = 25C 250 W E TJ -55 ... +150 C G = Gate, C = Collector, TJM 150 C E = Emitter, TAB = Collector Tstg -55 ... +150 C Maximum Lead temperature for soldering 300 C 1.6 mm (0.062 in.) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s 260 C Features High Voltage IGBT for resonant Md Mounting torque (M3) (TO-247) 1.13/10Nm/lb.in. power supplies - Induction heating Weight TO-247 AD 6 g - Rice cookers TO-268 4 g International standard package

5.1. ixgh24n60aui.pdf Size:117K _ixys

IXGH28N120BD1
IXGH28N120BD1
VCES = 600 V IXGH 24N60AU1 HiPerFASTTM IC25 = 48 A IXGH 24N60AU1S IGBT with Diode VCE(sat) = 2.7 V Combi Pack tfi = 275 ns TO-247 SMD (24N60AU1S) Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C; RGE = 1 M? 600 V G C (TAB) E VGES Continuous 20 V VGEM Transient 30 V TO-247 AD IC25 TC = 25C48 A (24N60AU1) IC90 TC = 90C24 A ICM TC = 25C, 1 ms 96 A C (TAB) SSOA VGE= 15 V, TVJ = 125C, RG = 22 ? ICM = 48 A G C (RBSOA) Clamped inductive load, L = 100 H @ 0.8 VCES E G = Gate, C = Collector, PC TC = 25C 150 W E = Emitter, TAB = Collector TJ -55 ... +150 C TJM 150 C Features Tstg -55 ... +150 C International standard packages JEDEC TO-247 SMD surface Maximum Lead and Tab temperature for soldering 300 C mountable and JEDEC TO-247 AD 1.6 mm (0.062 in.) from case for 10 s IGBT and anti-parallel FRED in one package Md Mounting torque, TO-247 AD 1.13/10 Nm/lb.in. 2nd generation HDMOSTM process Weight T

5.2. ixgh20n60-a_ixgm20n60-a.pdf Size:64K _ixys

IXGH28N120BD1
IXGH28N120BD1
VCES IC25 VCE(sat) Low VCE(sat) IGBT IXGH/IXGM 20 N60 600 V 40 A 2.5 V High speed IGBT IXGH/IXGM 20 N60A 600 V 40 A 3.0 V Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C; RGE = 1 M? 600 V VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25C40 A IC90 TC = 90C20 A TO-204 AE (IXGM) ICM TC = 25C, 1 ms 80 A SSOA VGE= 15 V, TVJ = 125C, RG = 82 ? ICM = 40 A (RBSOA) Clamped inductive load, L = 100 H @ 0.8 VCES PC TC = 25C 150 W C TJ -55 ... +150 C G = Gate, C = Collector, TJM 150 C E = Emitter, TAB = Collector Tstg -55 ... +150 C Md Mounting torque (M3) 1.13/10 Nm/lb.in. Features International standard packages Weight TO-204 = 18 g, TO-247 = 6 g 2nd generation HDMOSTM process Maximum lead temperature for soldering 300 C Low VCE(sat) 1.6 mm (0.062 in.) from case for 10 s - for low on-state conduction losses High current handling capability MOS Gate turn-on - drive simplicity Volta

5.3. ixgh25n160_ixgt25n160.pdf Size:142K _ixys

IXGH28N120BD1
IXGH28N120BD1
VCES = 1600 V IXGH 25N160 High Voltage IGBT IC25 = 75 A IXGT 25N160 VCE(sat)= 2.5 V For Capacitor Discharge Applications Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25C to 150C 1600 V VCGR TJ = 25C to 150C; RGE = 1 M? 1600 V VGES Continuous 20 V G C C (TAB) VGEM Transient 30 V E IC25 TC = 25C 75 A TO-268 (IXGT) IC110 TC = 110C 25 A ICM TC = 25C, VGE = 20 V, 1 ms 200 A G SSOA VGE= 15 V, TVJ = 125C, RG = 20 ? ICM = 100 A E (RBSOA) Clamped inductive load @ 0.8 VCES C (TAB) PC TC = 25C 300 W G = Gate, C = Collector, TJ -55 ... +150 C E = Emitter, TAB = Collector TJM 150 C Features Tstg -55 ... +150 C High peak current capability Maximum Lead temperature for soldering 300 C Low saturation voltage 1.6 mm (0.062 in.) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s 260 C MOS Gate turn-on -drive simplicity Md Mounting torque (TO-247) 1.13/10 Nm/lb-in R

5.4. ixgh20n120b_ixgt20n120b.pdf Size:568K _ixys

IXGH28N120BD1
IXGH28N120BD1
IXGH 20N120B VCES = 1200 V High Voltage IGBT IXGT 20N120B IC25 = 40 A VCE(sat) = 3.4 V Preliminary Data Sheet tfi(typ) = 160 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25C to 150C 1200 V VCGR TJ = 25C to 150C; RGE = 1 M? 1200 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25C40 A TO-247 AD (IXGH) IC110 TC = 110C20 A ICM TC = 25C, 1 ms 80 A SSOA VGE = 15 V, TVJ = 125C, RG = 10 ? ICM = 80 A (RBSOA) Clamped inductive load @ 0.8 VCES C (TAB) G C PC TC = 25C 190 W E TJ -55 ... +150 C G = Gate, C = Collector, TJM 150 C E = Emitter, TAB = Collector Tstg -55 ... +150 C Maximum Lead temperature for soldering 300 C 1.6 mm (0.062 in.) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s 260 C Features High Voltage IGBT for resonant Md Mounting torque (M3) (TO-247) 1.13/10Nm/lb.in. power supplies - Induction heating Weight TO-247 AD 6 g - Rice cookers TO-268 4 g Internatio

5.5. ixgh24n170a_ixgt24n170a.pdf Size:519K _ixys

IXGH28N120BD1
IXGH28N120BD1
IXGH 24N170A VCES = 1700 V High Voltage IXGT 24N170A IC25 = 24 A IGBT VCE(sat) = 6.0 V tfi(typ) = 45 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25C to 150C 1700 V VCGR TJ = 25C to 150C; RGE = 1 M? 1700 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25C24 A TO-247 AD (IXGH) IC90 TC = 90C16 A ICM TC = 25C, 1 ms 75 A SSOA VGE = 15 V, TVJ = 125C, RG = 5? ICM = 50 A C (TAB) (RBSOA) Clamped inductive load @ 0.8 VCES G C E tSC TJ = 125C, VCE = 1200 V; VGE = 15 V, RG = 22? 10 s G = Gate, C = Collector, E = Emitter, TAB = Collector PC TC = 25C 250 W TJ -55 ... +150 C Features TJM 150 C International standard packages Tstg -55 ... +150 C JEDEC TO-268 and JEDEC TO-247 AD Md Mounting torque (M3) (TO-247) 1.13/10Nm/lb.in. High current handling capability MOS Gate turn-on Maximum lead temperature for soldering 300 C - drive simplicity 1.6 mm (0.062 in.) from case for 1

5.6. ixgh20n120_ixgt20n120.pdf Size:106K _ixys

IXGH28N120BD1
IXGH28N120BD1
VCES = 1200 V IXGH 20N120 IGBT IC25 = 40 A IXGT 20N120 VCE(sat) = 2.5 V tfi(typ) = 380 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25C to 150C 1200 V VCGR TJ = 25C to 150C; RGE = 1 M? 1200 V VGES Continuous 20 V VGEM Transient 30 V G D S IC25 TC = 25C40 A IC90 TC = 90C20 A TO-268 (IXGT) ICM TC = 25C, 1 ms 80 A SSOA VGE = 15 V, TVJ = 125C, RG = 47 ? ICM = 40 A (RBSOA) Clamped inductive load @ 0.8 VCES G E C (TAB) PC TC = 25C 150 W TJ -55 ... +150 C TJM 150 C Tstg -55 ... +150 C Features Maximum lead temperature for soldering 300 C International standard packages 1.6 mm (0.062 in.) from case for 10 s JEDEC TO-247 and TO-268 Maximum tab temperature for soldering 260 C High current handling capability Md Mounting torque (TO-247) 1.13/10 Nm/lb.in. MOS Gate turn-on - drive simplicity Weight TO-247 6 g TO-268 5 g Applications AC motor speed control DC servo and robot drives Symbol Tes

5.7. ixga20n120a3_ixgh20n120a3_ixgp20n120a3.pdf Size:236K _ixys

IXGH28N120BD1
IXGH28N120BD1
VCES = 1200V GenX3TM 1200V IGBTs IXGA20N120A3 IC110 = 20A IXGP20N120A3 ? VCE(sat) ? ? 2.5V ? IXGH20N120A3 ? Ultra-Low Vsat PT IGBTs for up to 3 kHz Switching TO-263 AA (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25C to 150C 1200 V VCGR TJ = 25C to 150C, RGE = 1M? 1200 V VGES Continuous 20 V VGEM Transient 30 V G C C (Tab) E IC25 TC = 25C40 A IC110 TC = 110C20 A TO-247 (IXGH) ICM TC = 25C, 1ms 120 A SSOA VGE= 15V, TJ = 125C, RG = 10? ICM = 40 A ? (RBSOA) Clamped Inductive Load @VCE ? V ? 960 ? ? PC TC = 25C 180 W G C TJ -55 ... +150 C E C (Tab) TJM 150 C Tstg -55 ... +150 C G = Gate C = Collector E = Emitter Tab = Collector Md Mounting Torque (TO-247 & TO-220) 1.13/10 Nm/lb.in. FC Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb. TL Maximum Lead Temperature for Soldering 300 C TSOLD 1.6mm (0.062 in.) from Case for 10s 260 C Features Weight TO-263 2.5 g Optimized for Low Conduct

5.8. ixgh20n100_ixgt20n100.pdf Size:53K _ixys

IXGH28N120BD1
IXGH28N120BD1
IXGH 20N100 VCES = 1000 V IGBT IXGT 20N100 IC25 = 40 A VCE(sat) = 3.0 V tfi(typ) = 280 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25C to 150C 1000 V G VCGR TJ = 25C to 150C; RGE = 1 MW 1000 V E VGES Continuous 20 V (TAB) VGEM Transient 30 V TO-247 AD (IXGH) IC25 TC = 25C40 A IC90 TC = 90C20 A ICM TC = 25C, 1 ms 80 A SSOA VGE= 15 V, TVJ = 125C, RG = 47 W ICM = 40 A (RBSOA) Clamped inductive load, L = 100 mH @ 0.8 VCES G C E C (TAB) PC TC = 25C 150 W TJ -55 ... +150 C G = Gate, C = Collector, E = Emitter, TAB = Collector TJM 150 C Tstg -55 ... +150 C Maximum Lead temperature for soldering 300 C 1.6 mm (0.062 in.) from case for 10 s Features Maximum Tab temperature for soldering SMD devices for 10 s 260 C International standard packages JEDEC TO-268 surface and Md Mounting torque (M3) 1.13/10 Nm/lb.in. JEDEC TO-247 AD Weight TO-247 AD 6 g High current handling capability TO-268 4 g MOS Gat

See also transistors datasheet: IXGH24N170 , IXGH24N170A , IXGH24N170AH1 , IXGH24N60C4 , IXGH24N60C4D1 , IXGH25N160 , IXGH25N250 , IXGH28N120B , SKW30N60HS , IXGH28N140B3H1 , IXGH28N60B3D1 , IXGH28N60BD1 , IXGH2N250 , IXGH30N120B3 , IXGH30N120B3D1 , IXGH30N120C3H1 , IXGH30N60B2 .

Keywords

 IXGH28N120BD1 Datasheet  IXGH28N120BD1 Datenblatt  IXGH28N120BD1 RoHS  IXGH28N120BD1 Distributor
 IXGH28N120BD1 Application Notes  IXGH28N120BD1 Component  IXGH28N120BD1 Circuit  IXGH28N120BD1 Schematic
 IXGH28N120BD1 Equivalent  IXGH28N120BD1 Cross Reference  IXGH28N120BD1 Data Sheet  IXGH28N120BD1 Fiche Technique

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