IGBT Datasheet



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IXGH28N120BD1
  IXGH28N120BD1
  IXGH28N120BD1
  IXGH28N120BD1
 
IXGH28N120BD1
  IXGH28N120BD1
  IXGH28N120BD1
  IXGH28N120BD1
 
 
List
10N40C1D ..APT15GP90K
APT15GT60BR ..FGA60N60UFD
FGA90N33ATD ..GT15J101
GT15J102 ..HGT1S12N60C3DS9A
HGT1S12N60C3R ..HGTG30N60C3D
HGTG34N100E2 ..IGW40T120
IGW50N60H3 ..IRG4BC30F
IRG4BC30FD ..IRG6S330U
IRG7I313U ..IXA12IF1200TC
IXA17IF1200HJ ..IXGA15N120C
IXGA16N60B2 ..IXGH24N60C4D1
IXGH24N60CD1 ..IXGH56N60B3D1
IXGH60N30C3 ..IXGP20N120A3
IXGP20N120B3 ..IXGT25N160
IXGT25N250 ..IXSH10N120A
IXSH10N120AU1 ..IXXH50N60C3
IXXH50N60C3D1 ..MII200-12A4
MII300-12A4 ..MUBW10-06A7
MUBW10-12A7 ..RJH1CD5DPQ-E0
RJH1CD6DPQ-A0 ..SGH13N60UFD
SGH15N120RUF ..SKM100GB063D
SKM100GB123D ..SKW30N60
SKW30N60HS ..STGD3NB60S
STGD3NB60SD ..TA49014
TA49015 ..VWI35-06P1
 
IXGH28N120BD1 All IGBT Data Sheet. Parameters and Characteristics. IGBT Cross Reference Database.
 

IXGH28N120BD1 IGBT Transistor Datasheet. Parameters and Characteristics.

Type Designator: IXGH28N120BD1

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W:

Maximum collector-emitter voltage |Uce|, V: 1200V

Collector-emitter saturation voltage |Ucesat|, V: 3.5V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 50A

Maximum junction temperature (Tj), °C:

Rise time, nS: 170

Maximum collector capacity (Cc), pF:

Package: TO247

Equivalent transistors for IXGH28N120BD1 - Cross-Reference Search

IXGH28N120BD1 PDF doc:

1.1. ixgh28n120b_ixgt28n120b.pdf Size:575K _ixys

IXGH28N120BD1
IXGH28N120BD1
IXGH 28N120B VCES = 1200 V High Voltage IGBT IXGT 28N120B IC25 = 50 A VCE(sat) = 3.5 V tfi(typ) = 160 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25C to 150C 1200 V VCGR TJ = 25C to 150C; RGE = 1 M? 1200 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25C50 A TO-247 AD (IXGH) IC110 TC = 110C28 A ICM TC = 25C, 1 ms 150 A SSOA VGE = 15 V, TVJ = 125C, RG = 5 ? ICM = 120 A (RBSOA) Clamped inductive load @ 0.8 VCES C (TAB) G C PC TC = 25C 250 W E TJ -55 ... +150 C G = Gate, C = Collector, TJM 150 C E = Emitter, TAB = Collector Tstg -55 ... +150 C Maximum Lead temperature for soldering 300 C 1.6 mm (0.062 in.) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s 260 C Features High Voltage IGBT for resonant Md Mounting torque (M3) (TO-247) 1.13/10Nm/lb.in. power supplies - Induction heating Weight TO-247 AD 6 g - Rice cookers TO-268 4 g International standard package

5.1. ixgh20n60-a_ixgm20n60-a.pdf Size:64K _ixys

IXGH28N120BD1
IXGH28N120BD1
VCES IC25 VCE(sat) Low VCE(sat) IGBT IXGH/IXGM 20 N60 600 V 40 A 2.5 V High speed IGBT IXGH/IXGM 20 N60A 600 V 40 A 3.0 V Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C; RGE = 1 M? 600 V VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25C40 A IC90 TC = 90C20 A TO-204 AE (IXGM) ICM TC = 25C, 1 ms 80 A SSOA VGE= 15 V, TVJ = 125C, RG = 82 ? ICM = 40 A (RBSOA) Clamped inductive load, L = 100 H @ 0.8 VCES PC TC = 25C 150 W C TJ -55 ... +150 C G = Gate, C = Collector, TJM 150 C E = Emitter, TAB = Collector Tstg -55 ... +150 C Md Mounting torque (M3) 1.13/10 Nm/lb.in. Features International standard packages Weight TO-204 = 18 g, TO-247 = 6 g 2nd generation HDMOSTM process Maximum lead temperature for soldering 300 C Low VCE(sat) 1.6 mm (0.062 in.) from case for 10 s - for low on-state conduction losses High current handling capability MOS Gate turn-on - drive simplicity Volta

5.2. ixgh20n100_ixgt20n100.pdf Size:53K _ixys

IXGH28N120BD1
IXGH28N120BD1
IXGH 20N100 VCES = 1000 V IGBT IXGT 20N100 IC25 = 40 A VCE(sat) = 3.0 V tfi(typ) = 280 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25C to 150C 1000 V G VCGR TJ = 25C to 150C; RGE = 1 MW 1000 V E VGES Continuous 20 V (TAB) VGEM Transient 30 V TO-247 AD (IXGH) IC25 TC = 25C40 A IC90 TC = 90C20 A ICM TC = 25C, 1 ms 80 A SSOA VGE= 15 V, TVJ = 125C, RG = 47 W ICM = 40 A (RBSOA) Clamped inductive load, L = 100 mH @ 0.8 VCES G C E C (TAB) PC TC = 25C 150 W TJ -55 ... +150 C G = Gate, C = Collector, E = Emitter, TAB = Collector TJM 150 C Tstg -55 ... +150 C Maximum Lead temperature for soldering 300 C 1.6 mm (0.062 in.) from case for 10 s Features Maximum Tab temperature for soldering SMD devices for 10 s 260 C International standard packages JEDEC TO-268 surface and Md Mounting torque (M3) 1.13/10 Nm/lb.in. JEDEC TO-247 AD Weight TO-247 AD 6 g High current handling capability TO-268 4 g MOS Gat

5.3. ixgh20n120_ixgt20n120.pdf Size:106K _ixys

IXGH28N120BD1
IXGH28N120BD1
VCES = 1200 V IXGH 20N120 IGBT IC25 = 40 A IXGT 20N120 VCE(sat) = 2.5 V tfi(typ) = 380 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25C to 150C 1200 V VCGR TJ = 25C to 150C; RGE = 1 M? 1200 V VGES Continuous 20 V VGEM Transient 30 V G D S IC25 TC = 25C40 A IC90 TC = 90C20 A TO-268 (IXGT) ICM TC = 25C, 1 ms 80 A SSOA VGE = 15 V, TVJ = 125C, RG = 47 ? ICM = 40 A (RBSOA) Clamped inductive load @ 0.8 VCES G E C (TAB) PC TC = 25C 150 W TJ -55 ... +150 C TJM 150 C Tstg -55 ... +150 C Features Maximum lead temperature for soldering 300 C International standard packages 1.6 mm (0.062 in.) from case for 10 s JEDEC TO-247 and TO-268 Maximum tab temperature for soldering 260 C High current handling capability Md Mounting torque (TO-247) 1.13/10 Nm/lb.in. MOS Gate turn-on - drive simplicity Weight TO-247 6 g TO-268 5 g Applications AC motor speed control DC servo and robot drives Symbol Tes

5.4. ixgh24n170a_ixgt24n170a.pdf Size:519K _ixys

IXGH28N120BD1
IXGH28N120BD1
IXGH 24N170A VCES = 1700 V High Voltage IXGT 24N170A IC25 = 24 A IGBT VCE(sat) = 6.0 V tfi(typ) = 45 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25C to 150C 1700 V VCGR TJ = 25C to 150C; RGE = 1 M? 1700 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25C24 A TO-247 AD (IXGH) IC90 TC = 90C16 A ICM TC = 25C, 1 ms 75 A SSOA VGE = 15 V, TVJ = 125C, RG = 5? ICM = 50 A C (TAB) (RBSOA) Clamped inductive load @ 0.8 VCES G C E tSC TJ = 125C, VCE = 1200 V; VGE = 15 V, RG = 22? 10 s G = Gate, C = Collector, E = Emitter, TAB = Collector PC TC = 25C 250 W TJ -55 ... +150 C Features TJM 150 C International standard packages Tstg -55 ... +150 C JEDEC TO-268 and JEDEC TO-247 AD Md Mounting torque (M3) (TO-247) 1.13/10Nm/lb.in. High current handling capability MOS Gate turn-on Maximum lead temperature for soldering 300 C - drive simplicity 1.6 mm (0.062 in.) from case for 1

5.5. ixgh20n120b_ixgt20n120b.pdf Size:568K _ixys

IXGH28N120BD1
IXGH28N120BD1
IXGH 20N120B VCES = 1200 V High Voltage IGBT IXGT 20N120B IC25 = 40 A VCE(sat) = 3.4 V Preliminary Data Sheet tfi(typ) = 160 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25C to 150C 1200 V VCGR TJ = 25C to 150C; RGE = 1 M? 1200 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25C40 A TO-247 AD (IXGH) IC110 TC = 110C20 A ICM TC = 25C, 1 ms 80 A SSOA VGE = 15 V, TVJ = 125C, RG = 10 ? ICM = 80 A (RBSOA) Clamped inductive load @ 0.8 VCES C (TAB) G C PC TC = 25C 190 W E TJ -55 ... +150 C G = Gate, C = Collector, TJM 150 C E = Emitter, TAB = Collector Tstg -55 ... +150 C Maximum Lead temperature for soldering 300 C 1.6 mm (0.062 in.) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s 260 C Features High Voltage IGBT for resonant Md Mounting torque (M3) (TO-247) 1.13/10Nm/lb.in. power supplies - Induction heating Weight TO-247 AD 6 g - Rice cookers TO-268 4 g Internatio

5.6. ixga20n120a3_ixgh20n120a3_ixgp20n120a3.pdf Size:236K _ixys

IXGH28N120BD1
IXGH28N120BD1
VCES = 1200V GenX3TM 1200V IGBTs IXGA20N120A3 IC110 = 20A IXGP20N120A3 ? VCE(sat) ? ? 2.5V ? IXGH20N120A3 ? Ultra-Low Vsat PT IGBTs for up to 3 kHz Switching TO-263 AA (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25C to 150C 1200 V VCGR TJ = 25C to 150C, RGE = 1M? 1200 V VGES Continuous 20 V VGEM Transient 30 V G C C (Tab) E IC25 TC = 25C40 A IC110 TC = 110C20 A TO-247 (IXGH) ICM TC = 25C, 1ms 120 A SSOA VGE= 15V, TJ = 125C, RG = 10? ICM = 40 A ? (RBSOA) Clamped Inductive Load @VCE ? V ? 960 ? ? PC TC = 25C 180 W G C TJ -55 ... +150 C E C (Tab) TJM 150 C Tstg -55 ... +150 C G = Gate C = Collector E = Emitter Tab = Collector Md Mounting Torque (TO-247 & TO-220) 1.13/10 Nm/lb.in. FC Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb. TL Maximum Lead Temperature for Soldering 300 C TSOLD 1.6mm (0.062 in.) from Case for 10s 260 C Features Weight TO-263 2.5 g Optimized for Low Conduct

5.7. ixgh24n60aui.pdf Size:117K _ixys

IXGH28N120BD1
IXGH28N120BD1
VCES = 600 V IXGH 24N60AU1 HiPerFASTTM IC25 = 48 A IXGH 24N60AU1S IGBT with Diode VCE(sat) = 2.7 V Combi Pack tfi = 275 ns TO-247 SMD (24N60AU1S) Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C; RGE = 1 M? 600 V G C (TAB) E VGES Continuous 20 V VGEM Transient 30 V TO-247 AD IC25 TC = 25C48 A (24N60AU1) IC90 TC = 90C24 A ICM TC = 25C, 1 ms 96 A C (TAB) SSOA VGE= 15 V, TVJ = 125C, RG = 22 ? ICM = 48 A G C (RBSOA) Clamped inductive load, L = 100 H @ 0.8 VCES E G = Gate, C = Collector, PC TC = 25C 150 W E = Emitter, TAB = Collector TJ -55 ... +150 C TJM 150 C Features Tstg -55 ... +150 C International standard packages JEDEC TO-247 SMD surface Maximum Lead and Tab temperature for soldering 300 C mountable and JEDEC TO-247 AD 1.6 mm (0.062 in.) from case for 10 s IGBT and anti-parallel FRED in one package Md Mounting torque, TO-247 AD 1.13/10 Nm/lb.in. 2nd generation HDMOSTM process Weight T

5.8. ixgh25n160_ixgt25n160.pdf Size:142K _ixys

IXGH28N120BD1
IXGH28N120BD1
VCES = 1600 V IXGH 25N160 High Voltage IGBT IC25 = 75 A IXGT 25N160 VCE(sat)= 2.5 V For Capacitor Discharge Applications Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25C to 150C 1600 V VCGR TJ = 25C to 150C; RGE = 1 M? 1600 V VGES Continuous 20 V G C C (TAB) VGEM Transient 30 V E IC25 TC = 25C 75 A TO-268 (IXGT) IC110 TC = 110C 25 A ICM TC = 25C, VGE = 20 V, 1 ms 200 A G SSOA VGE= 15 V, TVJ = 125C, RG = 20 ? ICM = 100 A E (RBSOA) Clamped inductive load @ 0.8 VCES C (TAB) PC TC = 25C 300 W G = Gate, C = Collector, TJ -55 ... +150 C E = Emitter, TAB = Collector TJM 150 C Features Tstg -55 ... +150 C High peak current capability Maximum Lead temperature for soldering 300 C Low saturation voltage 1.6 mm (0.062 in.) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s 260 C MOS Gate turn-on -drive simplicity Md Mounting torque (TO-247) 1.13/10 Nm/lb-in R

See also transistors datasheet: IXGH24N170 , IXGH24N170A , IXGH24N170AH1 , IXGH24N60C4 , IXGH24N60C4D1 , IXGH25N160 , IXGH25N250 , IXGH28N120B , SKW30N60HS , IXGH28N140B3H1 , IXGH28N60B3D1 , IXGH28N60BD1 , IXGH2N250 , IXGH30N120B3 , IXGH30N120B3D1 , IXGH30N120C3H1 , IXGH30N60B2 .

Keywords

 IXGH28N120BD1 Datasheet  IXGH28N120BD1 Datenblatt  IXGH28N120BD1 RoHS  IXGH28N120BD1 Distributor
 IXGH28N120BD1 Application Notes  IXGH28N120BD1 Component  IXGH28N120BD1 Circuit  IXGH28N120BD1 Schematic
 IXGH28N120BD1 Equivalent  IXGH28N120BD1 Cross Reference  IXGH28N120BD1 Data Sheet  IXGH28N120BD1 Fiche Technique

 

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