IGBT Datasheet


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CT60AM-18F
  CT60AM-18F
  CT60AM-18F
 
CT60AM-18F
  CT60AM-18F
  CT60AM-18F
 
CT60AM-18F
  CT60AM-18F
 
 
List
10N40C1D ..APT50GF120LR
APT50GF60AR ..FGPF4533
FGPF4536 ..GT5G101
GT5G102 ..HGTD7N60B3S
HGTD7N60C3 ..HGTP7N60A4D
HGTP7N60B3 ..IKW25T120
IKW30N100T ..IRG4PH30KD
IRG4PH40K ..IRGP4066D-E
IRGP4068D ..IXDN50N120AU1
IXDN55N120 ..IXGH15N120BD1
IXGH15N120C ..IXGH40N120C3
IXGH40N120C3D1 ..IXGN200N60B3
IXGN320N60A3 ..IXGR60N60B2
IXGR60N60B2D1 ..IXGX32N170AH1
IXGX32N170H1 ..IXSP24N60B
IXSQ10N60B2D1 ..MGS05N60D
MGS13002D ..MIXA80W1200TED
MIXA80W1200TED ..MWI80-12T6K
NGB15N41CLT4 ..RJP60D0DPM
RJP60D0DPP-M0 ..SGS6N60UFD
SGU15N40L ..SKM400GB124D
SKM40GD123D ..STGB10NC60HD
STGB10NC60K ..STGW25H120DF
STGW30N120KD ..VWI35-06P1
 
CT60AM-18F All IGBT Data Sheet. Parameters and Characteristics. IGBT Cross Reference Database.
 

CT60AM-18F IGBT Transistor Datasheet. Parameters and Characteristics.

Type Designator: CT60AM-18F

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 180W

Maximum collector-emitter voltage |Uce|, V: 900V

Collector-emitter saturation voltage |Ucesat|, V: 2.1V

Maximum gate-emitter voltage |Ueg|, V: 30V

Maximum collector current |Ic|, A: 60A

Maximum junction temperature (Tj), °C: 150

Rise time, nS: 50

Maximum collector capacity (Cc), pF: 4400pF

Package: TO3PL

Equivalent transistors for CT60AM-18F

CT60AM-18F PDF doc:

1.1. ct60am-18f.pdf Size:23K _mitsubishi

CT60AM-18F
CT60AM-18F
MITSUBISHI Nch IGBT CT60AM-18F INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18F OUTLINE DRAWING Dimensions in mm 5 20MAX. 2 ?3.2 2 1 0.5 3 5.45 5.45 4.0 VCES ............................................................................... 900V IC .........................................................................................60A GATE Simple drive COLLECTOR EMITTER Integrated Fast-recovery diode COLLECTOR Small tail loss Low VCE Saturation Voltage TO-3PL APPLICATION Microwave oven, Electromagnetic cooking devices, Rice-cookers, Voltage-resonant inverter circuit electric appliances MAXIMUM RATINGS (Tc = 25C) Symbol Parameter Conditions Ratings Unit VCES Collector-Emitter Voltage VGE = 0V 900 V VGES Gate-Emitter Voltage 25 V VGEM Peak Gate-Emitter Voltage 30 V IC Collector Current 60 A ICM Collector Current (Pulse) 120 A IE Emitter Current 40 A PC Maximum Power Dissipation 180 W Tj Junction Temperature 40 ~ +150 C Tstg Storage Temp

See also transistors datasheet: CT25ASJ-8 , CT30SM-12 , CT30TM-8 , CT30VM-8 , CT30VS-8 , CT35SM-8 , CT40TMH-8 , CT60AM-18B , IKW50N60T(Marking Code K50T60) , CT60AM-20 , CT75AM-12 , CY20AAJ-8 , CY25AAJ-8 , G10N40 , G10N40C1 , G10N40E1 , G10N50 .

Keywords

 CT60AM-18F Datasheet  CT60AM-18F Datenblatt  CT60AM-18F RoHS  CT60AM-18F Distributor
 CT60AM-18F Application Notes  CT60AM-18F Component  CT60AM-18F Circuit  CT60AM-18F Schematic
 CT60AM-18F Equivalent  CT60AM-18F Cross Reference  CT60AM-18F Data Sheet  CT60AM-18F Fiche Technique

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