IGBT Datasheet



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CT60AM-18F
  CT60AM-18F
  CT60AM-18F
  CT60AM-18F
 
CT60AM-18F
  CT60AM-18F
  CT60AM-18F
  CT60AM-18F
 
 
List
10N40C1D ..APT15GT60KR
APT20GF120BR ..FGH30N60LSD
FGH40N60SF ..GT20G101
GT20G102 ..HGT1S20N35G3VLS
HGT1S20N35G3VLS9A ..HGTH12N40E1
HGTH12N40E1D ..IHW25N120R2
IHW30N100R ..IRG4BC30UD
IRG4BC30W ..IRG7PH35UD
IRG7PH35UD1 ..IXA60IF1200NA
IXBF12N300 ..IXGA24N60C
IXGA30N120B3 ..IXGH28N30
IXGH28N30A ..IXGH72N60B3
IXGH72N60C3 ..IXGP30N60C2
IXGP30N60C3 ..IXGT30N120B3D1
IXGT30N60B ..IXSH24N60AU1
IXSH24N60B ..IXXX200N60B3
IXXX200N60C3 ..MITA10WB1200TMH
MITA15WB1200TMH ..MUBW25-12T7
MUBW30-06A7 ..RJH30H1DPP-M0
RJH30H2DPK-M0 ..SGH40N60UFD
SGH5N120RUF ..SKM145GB063DN
SKM145GB123D ..SM2G75US120
SM2G75US60 ..STGE50NC60VD
STGE50NC60WD ..TA49113
TA49115 ..VWI35-06P1
 
CT60AM-18F All IGBT Data Sheet. Parameters and Characteristics. IGBT Cross Reference Database.
 

CT60AM-18F IGBT Transistor Datasheet. Parameters and Characteristics.

Type Designator: CT60AM-18F

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 180W

Maximum collector-emitter voltage |Uce|, V: 900V

Collector-emitter saturation voltage |Ucesat|, V: 2.1V

Maximum gate-emitter voltage |Ueg|, V: 30V

Maximum collector current |Ic|, A: 60A

Maximum junction temperature (Tj), °C: 150

Rise time, nS: 50

Maximum collector capacity (Cc), pF: 4400pF

Package: TO3PL

Equivalent transistors for CT60AM-18F - Cross-Reference Search

CT60AM-18F PDF doc:

1.1. ct60am-18f.pdf Size:23K _mitsubishi

CT60AM-18F
CT60AM-18F
MITSUBISHI Nch IGBT CT60AM-18F INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18F OUTLINE DRAWING Dimensions in mm 5 20MAX. 2 ?3.2 2 1 0.5 3 5.45 5.45 4.0 VCES ............................................................................... 900V IC .........................................................................................60A GATE Simple drive COLLECTOR EMITTER Integrated Fast-recovery diode COLLECTOR Small tail loss Low VCE Saturation Voltage TO-3PL APPLICATION Microwave oven, Electromagnetic cooking devices, Rice-cookers, Voltage-resonant inverter circuit electric appliances MAXIMUM RATINGS (Tc = 25C) Symbol Parameter Conditions Ratings Unit VCES Collector-Emitter Voltage VGE = 0V 900 V VGES Gate-Emitter Voltage 25 V VGEM Peak Gate-Emitter Voltage 30 V IC Collector Current 60 A ICM Collector Current (Pulse) 120 A IE Emitter Current 40 A PC Maximum Power Dissipation 180 W Tj Junction Temperature 40 ~ +150 C Tstg Storage Temp

See also transistors datasheet: CT25ASJ-8 , CT30SM-12 , CT30TM-8 , CT30VM-8 , CT30VS-8 , CT35SM-8 , CT40TMH-8 , CT60AM-18B , IKW50N60T(Marking Code K50T60) , CT60AM-20 , CT75AM-12 , CY20AAJ-8 , CY25AAJ-8 , G10N40 , G10N40C1 , G10N40E1 , G10N50 .

Keywords

 CT60AM-18F Datasheet  CT60AM-18F Datenblatt  CT60AM-18F RoHS  CT60AM-18F Distributor
 CT60AM-18F Application Notes  CT60AM-18F Component  CT60AM-18F Circuit  CT60AM-18F Schematic
 CT60AM-18F Equivalent  CT60AM-18F Cross Reference  CT60AM-18F Data Sheet  CT60AM-18F Fiche Technique

 

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