IGBT Datasheet



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CT60AM-18F
  CT60AM-18F
  CT60AM-18F
  CT60AM-18F
 
CT60AM-18F
  CT60AM-18F
  CT60AM-18F
  CT60AM-18F
 
 
List
10N40C1D ..APT15GP90K
APT15GT60BR ..APT60GT60BR
APT60GT60JR ..APTGF90TDU60P
APTGF90X60E3 ..AUIRGS14C40L
AUIRGS30B60K ..G12N60C3D
G12N60D1 ..GT50M101
GT50Q101 ..HGTD3N60B3S
HGTD3N60C3 ..HGTP3N60B3D
HGTP3N60C3 ..IKU15N60R
IKW03N120H2 ..IRG4PC50U
IRG4PC50UD ..IRGP30B120KD-E
IRGP30B60KD-E ..IXBX64N250
IXBX75N170 ..IXGH12N100A
IXGH12N100AU1 ..IXGH36N60B3
IXGH36N60B3C1 ..IXGM17N100
IXGM17N100A ..IXGR48N60C3D1
IXGR50N160H1 ..IXGX100N170
IXGX120N120A3 ..IXSN55N120A
IXSN55N120AU1 ..MGP15N43CL
MGP15N60U ..MIXA40W1200TML
MIXA40W1200TML ..MWI50-12E6K
MWI50-12E7 ..RJP30E2DPP-M0
RJP30E3DPP-M0 ..SGR6N60UF
SGS10N60RUF ..SKM400GA062D
SKM400GA123D ..SNG201025
SNG20620A ..STGPL6NC60D
STGPL6NC60DI ..VWI35-06P1
 
CT60AM-18F All IGBT Data Sheet. Parameters and Characteristics. IGBT Cross Reference Database.
 

CT60AM-18F IGBT Transistor Datasheet. Parameters and Characteristics.

Type Designator: CT60AM-18F

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 180W

Maximum collector-emitter voltage |Uce|, V: 900V

Collector-emitter saturation voltage |Ucesat|, V: 2.1V

Maximum gate-emitter voltage |Ueg|, V: 30V

Maximum collector current |Ic|, A: 60A

Maximum junction temperature (Tj), °C: 150

Rise time, nS: 50

Maximum collector capacity (Cc), pF: 4400pF

Package: TO3PL

Equivalent transistors for CT60AM-18F - Cross-Reference Search

CT60AM-18F PDF doc:

1.1. ct60am-18f.pdf Size:23K _mitsubishi

CT60AM-18F
CT60AM-18F
MITSUBISHI Nch IGBT CT60AM-18F INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18F OUTLINE DRAWING Dimensions in mm 5 20MAX. 2 ?3.2 2 1 0.5 3 5.45 5.45 4.0 VCES ............................................................................... 900V IC .........................................................................................60A GATE Simple drive COLLECTOR EMITTER Integrated Fast-recovery diode COLLECTOR Small tail loss Low VCE Saturation Voltage TO-3PL APPLICATION Microwave oven, Electromagnetic cooking devices, Rice-cookers, Voltage-resonant inverter circuit electric appliances MAXIMUM RATINGS (Tc = 25C) Symbol Parameter Conditions Ratings Unit VCES Collector-Emitter Voltage VGE = 0V 900 V VGES Gate-Emitter Voltage 25 V VGEM Peak Gate-Emitter Voltage 30 V IC Collector Current 60 A ICM Collector Current (Pulse) 120 A IE Emitter Current 40 A PC Maximum Power Dissipation 180 W Tj Junction Temperature 40 ~ +150 C Tstg Storage Temp

See also transistors datasheet: CT25ASJ-8 , CT30SM-12 , CT30TM-8 , CT30VM-8 , CT30VS-8 , CT35SM-8 , CT40TMH-8 , CT60AM-18B , IKW50N60T(Marking Code K50T60) , CT60AM-20 , CT75AM-12 , CY20AAJ-8 , CY25AAJ-8 , G10N40 , G10N40C1 , G10N40E1 , G10N50 .

Keywords

 CT60AM-18F Datasheet  CT60AM-18F Datenblatt  CT60AM-18F RoHS  CT60AM-18F Distributor
 CT60AM-18F Application Notes  CT60AM-18F Component  CT60AM-18F Circuit  CT60AM-18F Schematic
 CT60AM-18F Equivalent  CT60AM-18F Cross Reference  CT60AM-18F Data Sheet  CT60AM-18F Fiche Technique

 

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