All IGBT Datasheet

 

IXGH30N60C2D1 IGBT (IC) Datasheet. Cross Reference Search. IXGH30N60C2D1 Equivalent

Type Designator: IXGH30N60C2D1

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W:

Maximum collector-emitter voltage |Uce|, V: 600V

Collector-emitter saturation voltage |Ucesat|, V: 2.5V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 70A

Maximum junction temperature (Tj), °C:

Rise time, nS: 32

Maximum collector capacity (Cc), pF:

Package: TO247

IXGH30N60C2D1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

IXGH30N60C2D1 PDF doc:

1.1. ixgh30n60b2_ixgt30n60b2.pdf Size:578K _ixys

IXGH30N60C2D1
IXGH30N60C2D1

Advance Technical Data VCES = 600 V IXGH 30N60B2 HiPerFASTTM IGBT IC25 = 70 A IXGT 30N60B2 VCE(sat) < 1.8 V Optimized for 10-25 KHz hard tfi typ = 82 ns switching and up to 150 KHz resonant switching TO-268 Symbol Test Conditions Maximum Ratings (IXGT) VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C; RGE = 1 M? 600 V G E C (TAB) VGES Continuous 20 V VGEM Transient 30 V

1.2. ixgh30n60c2_ixgt30n60c2.pdf Size:583K _ixys

IXGH30N60C2D1
IXGH30N60C2D1

VCES = 600 V IXGH 30N60C2 HiPerFASTTM IGBT IC25 = 70 A IXGT 30N60C2 VCE(sat) = 2.7 V C2-Class High Speed IGBTs tfi typ = 32 ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C; RGE = 1 M? 600 V G E C (TAB) VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25C (limited by leads) 70 A TO-247 (IXGH) IC110 TC = 110C30 A

1.3. ixgh30n60c2d1_ixgt30n60c2d1.pdf Size:164K _ixys

IXGH30N60C2D1
IXGH30N60C2D1

VCES = 600 V HiPerFASTTM IGBT IXGH 30N60C2D1 IC25 = 70 A IXGT 30N60C2D1 with Diode VCE(sat) = 2.7 V C2-Class High Speed IGBTs tfi typ = 32 ns Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C; RGE = 1 M? 600 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25C (limited by leads) 70 A IC110 TC = 110C

1.4. ixgh30n60b2d1_ixgt30n60b2d1.pdf Size:600K _ixys

IXGH30N60C2D1
IXGH30N60C2D1

Advance Technical Data VCES = 600 V HiPerFASTTM IGBT IXGH 30N60B2D1 IC25 = 70 A IXGT 30N60B2D1 VCE(sat) < 1.8 V Optimized for 10-25 KHz hard tfi typ = 82 ns switching and up to 150 KHz resonant switching Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C; RGE = 1 M? 600 V C (TAB) VGES Continuous 20 V G C VGEM Transient 3

1.5. ixgh30n60c2d1.pdf Size:159K _igbt

IXGH30N60C2D1
IXGH30N60C2D1

VCES = 600 V HiPerFASTTM IGBT IXGH 30N60C2D1 IC25 = 70 A IXGT 30N60C2D1 with Diode VCE(sat) = 2.7 V C2-Class High Speed IGBTs tfi typ = 32 ns Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V C (TAB) VGES Continuous ±20 V G C VGEM Transient ±30 V E IC25 TC = 25°C (limited by leads) 70 A IC11

1.6. ixgh30n60b2d1.pdf Size:506K _igbt

IXGH30N60C2D1
IXGH30N60C2D1

Advance Technical Data VCES = 600 V HiPerFASTTM IGBT IXGH 30N60B2D1 IC25 = 70 A IXGT 30N60B2D1 VCE(sat) < 1.8 V Optimized for 10-25 KHz hard tfi typ = 82 ns switching and up to 150 KHz resonant switching Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V C (TAB) VGES Continuous ±20 V G C VGEM Tr

1.7. ixgh30n60b2.pdf Size:576K _igbt

IXGH30N60C2D1
IXGH30N60C2D1

Advance Technical Data VCES = 600 V IXGH 30N60B2 HiPerFASTTM IGBT IC25 = 70 A IXGT 30N60B2 VCE(sat) < 1.8 V Optimized for 10-25 KHz hard tfi typ = 82 ns switching and up to 150 KHz resonant switching TO-268 Symbol Test Conditions Maximum Ratings (IXGT) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V G E C (TAB) VGES Continuous ±20 V VGEM Transi

1.8. ixgh30n60c3.pdf Size:269K _igbt

IXGH30N60C2D1
IXGH30N60C2D1

GenX3TM 600V VCES = 600V IXGA30N60C3 IGBTs IC110 = 30A IXGP30N60C3 ≤ VCE(sat) ≤ ≤ 3.0V ≤ ≤ IXGH30N60C3 tfi(typ) = 47ns High-Speed PT IGBTs for 40-100kHz Switching TO-263 AA (IXGA) G E Symbol Test Conditions Maximum Ratings C (Tab) VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V TO-220AB (IXGP) VGES Continuous ± 20 V

1.9. ixgh30n60c2.pdf Size:580K _igbt

IXGH30N60C2D1
IXGH30N60C2D1

VCES = 600 V IXGH 30N60C2 HiPerFASTTM IGBT IC25 = 70 A IXGT 30N60C2 VCE(sat) = 2.7 V C2-Class High Speed IGBTs tfi typ = 32 ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V G E C (TAB) VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C (limited by leads) 70 A TO-247 (IXGH) IC110 TC =

1.10. ixgh30n60b.pdf Size:52K _igbt

IXGH30N60C2D1
IXGH30N60C2D1

IXGH30N60B VCES = 600 V HiPerFASTTM IGBT IXGT30N60B IC25 = 60 A VCE(sat) = 1.8 V tfi = 100 ns Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V C (TAB) G C VGEM Transient ±30 V E IC25 TC = 25°C60 A IC110 TC = 110°C30 A TO-268 (D3) ICM TC = 25°C, 1 ms 120 A (IXGT) SSOA

1.11. ixgh30n60c3c1.pdf Size:278K _igbt

IXGH30N60C2D1
IXGH30N60C2D1

GenX3TM 600V IGBTs VCES = 600V IXGA30N60C3C1 w/ SiC Anti-Parallel IC110 = 30A IXGP30N60C3C1 Diode ≤ ≤ VCE(sat) ≤ 3.0V ≤ ≤ IXGH30N60C3C1 tfi(typ) = 47ns TO-263 AA (IXGA) High-Speed PT IGBTs for 40 - 100kHz Switching G E C (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RG

1.12. ixgh30n60bd1.pdf Size:112K _igbt

IXGH30N60C2D1
IXGH30N60C2D1

IXGH 30N60BD1 HiPerFASTTM IGBT VCES = 600 V IXGT 30N60BD1 IC25 = 60 A with Diode VCE(sat) = 1.8 V tfi(typ) = 100 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25°C to 150°C 600 V G VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V E VGES Continuous ±20 V C (TAB) VGEM Transient ±30 V IC25 TC = 25°C60 A TO-247 AD (IXGH) IC90 TC = 90°C30 A ICM TC = 25°C, 1

1.13. ixgh30n60bu1.pdf Size:138K _igbt

IXGH30N60C2D1
IXGH30N60C2D1

HiPerFASTTM IGBT IXGH 30N60BU1 VCES = 600 V IXGT 30N60BU1 IC25 = 60 A with Diode VCE(sat) = 1.8 V Combi Pack tfi = 100 ns TO-268 (IXGT) G Symbol Test Conditions Maximum Ratings E VCES TJ = 25°C to 150°C 600 V C (TAB) VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V TO-247 AD VGEM Transient ±30 V IC25 TC = 25°C60 A C (TAB) IC110 TC = 110°C30 A G ICM

1.14. ixgh30n60c3d1.pdf Size:215K _igbt

IXGH30N60C2D1
IXGH30N60C2D1

GenX3TM 600V IGBTs VCES = 600V IXGH30N60C3D1 w/ Diode IC110 = 30A IXGT30N60C3D1 ≤ VCE(sat) ≤ 3.0V ≤ ≤ ≤ tfi(typ) = 47ns High-Speed PT IGBTs for 40-100 kHz Switching TO-268 (IXGT) Symbol Test Conditions Maximum Ratings G VCES TC = 25°C to 150°C 600 V E VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V C (Tab) VGES Continuous ± 20 V VGEM Transient ± 30 V TO-247 (IXG

1.15. ixgh30n60b4.pdf Size:81K _igbt

IXGH30N60C2D1
IXGH30N60C2D1

Preliminary Technical Information High-Gain IGBT VCES = 600V IXGH30N60B4 IC110 = 30A ≤ ≤ VCE(sat) ≤ 1.7V ≤ ≤ tfi(typ) = 88ns Medium-Speed PT Trench IGBT TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V G VGES Continuous ±20 V C Tab E VGEM Transient ±30 V IC25 TC = 25°C 66 A G = Ga

See also transistors datasheet: IXGH2N250 , IXGH30N120B3 , IXGH30N120B3D1 , IXGH30N120C3H1 , IXGH30N60B2 , IXGH30N60B2D1 , IXGH30N60B4 , IXGH30N60C2 , G20N60B3D , IXGH30N60C3 , IXGH30N60C3C1 , IXGH30N60C3D1 , IXGH32N100A3 , IXGH32N120A3 , IXGH32N170 , IXGH32N170A , IXGH32N90B2 .

Search Terms:

 IXGH30N60C2D1 - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


IXGH30N60C2D1
  IXGH30N60C2D1
  IXGH30N60C2D1
  IXGH30N60C2D1
 
IXGH30N60C2D1
  IXGH30N60C2D1
  IXGH30N60C2D1
  IXGH30N60C2D1
 

social 

LIST

Last Update

IGBT: STGWT60V60DF | STGWT60H65FB | STGWT60H65DFB | STGWT60H60DLFB | STGWT28IH125DF | STGWA60H65DFB | STGWA25S120DF3 | STGWA25H120F2 | STGWA25H120DF2 | STGW60V60F |

Enter a full or partial SMD code with a minimum of 2 letters or numbers