IXGH30N60C3 IGBT Transistor Datasheet. Parameters and Characteristics.

Type Designator: IXGH30N60C3

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W:

Maximum collector-emitter voltage |Uce|, V: 600V

Collector-emitter saturation voltage |Ucesat|, V: 3V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 60A

Maximum junction temperature (Tj), °C:

Rise time, nS: 47

Maximum collector capacity (Cc), pF:

Package: TO247

Equivalent transistors for IXGH30N60C3

IXGH30N60C3 PDF document for downloads:

1.1. ixgh30n60b2d1_ixgt30n60b2d1.pdf Size:600K _ixys

Advance Technical Data VCES = 600 V HiPerFASTTM IGBT IXGH 30N60B2D1 IC25 = 70 A IXGT 30N60B2D1 VCE(sat) < 1.8 V Optimized for 10-25 KHz hard tfi typ = 82 ns switching and up to 150 KHz resonant switching Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 M? 600 V C (TAB) VGES Continuous ±20 V G C VGEM Transient ±30 V E IC25 TC = 25°C (limited by leads) 70 A IC110 TC = 110°C30 A TO-268 (IXGT) ICM TC = 25°C, 1 ms 150 A SSOA VGE = 15 V, TVJ = 125°C, RG = 10 ? ICM = 60 A G (RBSOA) Clamped inductive load @ ? 600 V E C (TAB) PC TC = 25°C 190 W TJ -55 ... +150 °C G = Gate, C = Collector, TJM 150 °C E = Emitter, TAB = Collector Tstg -55 ... +150 °C Features Maximum lead temperature for soldering 300 °C 1.6 mm (0.062 in.) from case for 10 s Medium frequency IGBT Md Mounting torque (M3) (TO-247) 1.13/10Nm/lb.in. Square RBSOA High current handling capability Weight TO-247 6 g MO

1.2. ixgh30n60b2_ixgt30n60b2.pdf Size:578K _ixys

Advance Technical Data VCES = 600 V IXGH 30N60B2 HiPerFASTTM IGBT IC25 = 70 A IXGT 30N60B2 VCE(sat) < 1.8 V Optimized for 10-25 KHz hard tfi typ = 82 ns switching and up to 150 KHz resonant switching TO-268 Symbol Test Conditions Maximum Ratings (IXGT) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 M? 600 V G E C (TAB) VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C (limited by leads) 70 A TO-247 AD (IXGH) IC110 TC = 110°C30 A ICM TC = 25°C, 1 ms 150 A SSOA VGE = 15 V, TVJ = 125°C, RG = 10 ? ICM = 60 A C (TAB) G (RBSOA) Clamped inductive load @ ? 600 V C E PC TC = 25°C 190 W G = Gate, C = Collector, TJ -55 ... +150 °C E = Emitter, TAB = Collector TJM 150 °C Tstg -55 ... +150 °C Features Maximum lead temperature for soldering 300 °C 1.6 mm (0.062 in.) from case for 10 s Medium frequency IGBT Md Mounting torque (M3) 1.13/10 Nm/lb.in. Square RBSOA High current handling capability MOS Gate turn-on Weight TO-

1.3. ixgh30n60c2_ixgt30n60c2.pdf Size:583K _ixys

VCES = 600 V IXGH 30N60C2 HiPerFASTTM IGBT IC25 = 70 A IXGT 30N60C2 VCE(sat) = 2.7 V C2-Class High Speed IGBTs tfi typ = 32 ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 M? 600 V G E C (TAB) VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C (limited by leads) 70 A TO-247 (IXGH) IC110 TC = 110°C30 A ICM TC = 25°C, 1 ms 150 A SSOA VGE = 15 V, TVJ = 125°C, RG = 10 ? ICM = 60 A C (TAB) G (RBSOA) Clamped inductive load @ ? 600 V C E PC TC = 25°C 190 W G = Gate, C = Collector, TJ -55 ... +150 °C E = Emitter, TAB = Collector TJM 150 °C Tstg -55 ... +150 °C Features Maximum lead temperature for soldering 300 °C 1.6 mm (0.062 in.) from case for 10 s Very high frequency IGBT Plastic body for 10s 250 °C Square RBSOA Md Mounting torque (M3) (TO-247) 1.13/10Nm/lb.in. High current handling capability MOS Gate turn-on Weight TO-247 6 g - drive simplicity TO-268 4 g Ap

1.4. ixgh30n60c2d1_ixgt30n60c2d1.pdf Size:164K _ixys

VCES = 600 V HiPerFASTTM IGBT IXGH 30N60C2D1 IC25 = 70 A IXGT 30N60C2D1 with Diode VCE(sat) = 2.7 V C2-Class High Speed IGBTs tfi typ = 32 ns Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 M? 600 V C (TAB) VGES Continuous ±20 V G C VGEM Transient ±30 V E IC25 TC = 25°C (limited by leads) 70 A IC110 TC = 110°C30 A TO-268 (IXGT) ICM TC = 25°C, 1 ms 150 A SSOA VGE = 15 V, TVJ = 125°C, RG = 10 ? ICM = 60 A (RBSOA) Clamped inductive load @ ? 600 V G E PC TC = 25°C 190 W C (TAB) TJ -55 ... +150 °C TJM 150 °C G = Gate, C = Collector, E = Emitter, TAB = Collector Tstg -55 ... +150 °C Maximum lead temperature for soldering 300 °C Features 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10s 250 °C Very high frequency IGBT Square RBSOA Md Mounting torque (TO-247) 1.13/10Nm/lb.in. High current handling capability MOS Gate turn-on Weight TO-247 6 g - drive simplicity T

See also transistors datasheet: IXGH30N120B3 , IXGH30N120B3D1 , IXGH30N120C3H1 , IXGH30N60B2 , IXGH30N60B2D1 , IXGH30N60B4 , IXGH30N60C2 , IXGH30N60C2D1 , 10N40F1D , IXGH30N60C3C1 , IXGH30N60C3D1 , IXGH32N100A3 , IXGH32N120A3 , IXGH32N170 , IXGH32N170A , IXGH32N90B2 , IXGH32N90B2D1 .

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