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CT60AM-20 IGBT (IC) Datasheet. Cross Reference Search. CT60AM-20 Equivalent

Type Designator: CT60AM-20

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 250W

Maximum Collector-Emitter Voltage |Vce|, V: 1000V

Collector-Emitter saturation Voltage |Vcesat|, V: 2.6V

Maximum Gate-Emitter Voltage |Veg|, V: 20V

Maximum Collector Current |Ic|, A: 60A

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 300000

Maximum Collector Capacity (Cc), pF:

Package: TO3PL

CT60AM-20 Transistor Equivalent Substitute - IGBT Cross-Reference Search

CT60AM-20 PDF doc:

3.1. ct60am-18f.pdf Size:23K _mitsubishi

CT60AM-20
CT60AM-20

MITSUBISHI Nch IGBT CT60AM-18F INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18F OUTLINE DRAWING Dimensions in mm 5 20MAX. 2 ?3.2 2 1 0.5 3 5.45 5.45 4.0 VCES ............................................................................... 900V IC .........................................................................................60A GATE Simple drive COLLECTOR EMITTER In

See also transistors datasheet: CT30SM-12 , CT30TM-8 , CT30VM-8 , CT30VS-8 , CT35SM-8 , CT40TMH-8 , CT60AM-18B , CT60AM-18F , SGW10N60A , CT75AM-12 , CY20AAJ-8 , CY25AAJ-8 , G10N40 , G10N40C1 , G10N40E1 , G10N50 , G10N50C1 .

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