IXGH32N90B2D1 IGBT Transistor Datasheet. Parameters and Characteristics.

Type Designator: IXGH32N90B2D1

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W:

Maximum collector-emitter voltage |Uce|, V: 900V

Collector-emitter saturation voltage |Ucesat|, V: 2.7V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 64A

Maximum junction temperature (Tj), °C:

Rise time, nS: 165

Maximum collector capacity (Cc), pF:

Package: TO247

Equivalent transistors for IXGH32N90B2D1

IXGH32N90B2D1 PDF document for downloads:

1.1. ixgh32n90b2_ixgt32n90b2.pdf Size:202K _ixys

Advance Technical Information IXGH 32N90B2 VCES = 900 V HiPerFASTTM IGBT IXGT 32N90B2 IC25 = 64 A B2-Class High Speed IGBTs VCE(sat) = 2.7 V tfi typ = 150 ns Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25°C to 150°C 900 V VCGR TJ = 25°C to 150°C; RGE = 1 M? 900 V C (TAB) VGES Continuous ±20 V G VGEM Transient ±30 V C E IC25 TC = 25°C (limited by leads) 64 A TO-268 (IXGT) IC110 TC = 110°C32 A ICM TC = 25°C, 1 ms 200 A SSOA VGE = 15 V, TVJ = 125°C, RG = 10 ? ICM = 64 A G C (TAB) E (RBSOA) Clamped inductive load @ ? 600V PC TC = 25°C 300 W G = Gate, C = Collector, TJ -55 ... +150 °C E = Emitter, TAB = Collector TJM 150 °C Tstg -55 ... +150 °C Features Maximum lead temperature for soldering 300 °C High frequency IGBT 1.6 mm (0.062 in.) from case for 10 s High current handling capability Plastic body for 10 s 260 °C MOS Gate turn-on Md Mounting torque (TO-247) 1.13/10Nm/lb.in. - drive simplicity Weight TO-247 6 g Application

1.2. ixgh32n90b2d1_ixgt32n90b2d1.pdf Size:219K _ixys

Advance Technical Information VCES = 900 V IXGH 32N90B2D1 HiPerFASTTM IGBT IC25 = 64 A IXGT 32N90B2D1 with Fast Diode VCE(sat) = 2.7 V tfi typ = 150 ns B2-Class High Speed IGBTs with Ultrafast Diode Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25°C to 150°C 900 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 900 V C (TAB) VGES Continuous ±20 V G C VGEM Transient ±30 V E TO-268 (IXGT) IC25 TC = 25°C 64 A IC110 TC = 110°C 32 A ICM TC = 25°C, 1 ms 200 A G C (TAB) E SSOA VGE= 15 V, TVJ = 125°C, RG = 10 ? ICM = 64 A (RBSOA) Clamped inductive load: VCL < 600V PC TC = 25°C 300 W G = Gate C = Collector E = Emitter TAB = Collector TJ -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C Features Maximum lead temperature for soldering 300 °C • High frequency IGBT 1.6 mm (0.062 in.) from case for 10 s • High current handling capability Md Mounting torque (TO-247) 1.13/10Nm/lb.in. • MOS Gate turn-on Weight TO-247 6 g - drive simplicity TO-268 4 g App

3.1. ixgh32n170_ixgt32n170.pdf Size:577K _ixys

High Voltage IXGH 32N170 VCES = 1700 V IXGT 32N170 IC25 = 75 A IGBT VCE(sat) = 3.3 V tfi(typ) = 250 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 M? 1700 V G VGES Continuous ±20 V E C (TAB) VGEM Transient ±30 V IC25 TC = 25°C75 A TO-247 AD (IXGH) IC90 TC = 90°C32 A ICM TC = 25°C, 1 ms 200 A SSOA VGE = 15 V, TVJ = 125°C, RG = 5 ? ICM = 90 A C (TAB) (RBSOA) Clamped inductive load @ 0.8 VCES G C E PC TC = 25°C 350 W G = Gate, C = Collector, TJ -55 ... +150 °C E = Emitter, TAB = Collector Features TJM 150 °C Tstg -55 ... +150 °C International standard packages Maximum Lead temperature for soldering 300 °C JEDEC TO-268 and 1.6 mm (0.062 in.) from case for 10 s JEDEC TO-247 AD Maximum Tab temperature for soldering SMD devices for 10 s 260 °C High current handling capability MOS Gate turn-on Md Mounting torque (M3) 1.13/10Nm/lb.in. - drive simplicity

3.2. ixgh32n170a_ixgt32n170a.pdf Size:572K _ixys

IXGH 32N170A VCES = 1700 V High Voltage IXGT 32N170A IC25 = 32 A IGBT VCE(sat) = 5.0 V tfi(typ) = 50 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 M? 1700 V G VGES Continuous ±20 V E C (TAB) VGEM Transient ±30 V IC25 TC = 25°C32 A TO-247 AD (IXGH) IC90 TC = 90°C21 A ICM TC = 25°C, 1 ms 110 A SSOA VGE = 15 V, TVJ = 125°C, RG = 5? ICM = 70 A C (TAB) (RBSOA) Clamped inductive load @ 0.8 VCES G C E tSC TJ = 125°C, VCE = 1200 V; VGE = 15 V, RG = 10? 10 µs G = Gate, C = Collector, E = Emitter, TAB = Collector PC TC = 25°C 350 W TJ -55 ... +150 °C Features TJM 150 °C International standard packages Tstg -55 ... +150 °C JEDEC TO-268 and JEDEC TO-247 AD Md Mounting torque (M3) (TO-247) 1.13/10Nm/lb.in. High current handling capability MOS Gate turn-on Maximum lead temperature for soldering 300 °C - drive simplicity 1.6 mm (0.062 in.) from case for 10 s Rugged NPT stru

See also transistors datasheet: IXGH30N60C3 , IXGH30N60C3C1 , IXGH30N60C3D1 , IXGH32N100A3 , IXGH32N120A3 , IXGH32N170 , IXGH32N170A , IXGH32N90B2 , GT40T301 , IXGH34N60B2 , IXGH35N120B , IXGH35N120C , IXGH36N60A3 , IXGH36N60A3D4 , IXGH36N60B3 , IXGH36N60B3C1 , IXGH36N60B3D1 .

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