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CY25AAJ-8 IGBT (IC) Datasheet. Cross Reference Search. CY25AAJ-8 Equivalent

Type Designator: CY25AAJ-8

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W:

Maximum Collector-Emitter Voltage |Vce|, V: 400V

Collector-Emitter saturation Voltage |Vcesat|, V: 1.5V

Maximum Gate-Emitter Voltage |Veg|, V: 8V

Maximum Collector Current |Ic|, A: 150A

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 0

Maximum Collector Capacity (Cc), pF:

Package: SOP8

CY25AAJ-8 Transistor Equivalent Substitute - IGBT Cross-Reference Search

CY25AAJ-8 PDF doc:

1.1. cy25aaj-8f.pdf Size:112K _igbt_a

CY25AAJ-8
CY25AAJ-8

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

See also transistors datasheet: CT30VS-8 , CT35SM-8 , CT40TMH-8 , CT60AM-18B , CT60AM-18F , CT60AM-20 , CT75AM-12 , CY20AAJ-8 , RJP30E2DPP-M0 , G10N40 , G10N40C1 , G10N40E1 , G10N50 , G10N50C1 , G10N50E1 , G12N40C1 , G12N40C1D .

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 CY25AAJ-8 - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


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