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IXGH48N60B3D1 IGBT (IC) Datasheet. Cross Reference Search. IXGH48N60B3D1 Equivalent

Type Designator: IXGH48N60B3D1

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W:

Maximum Collector-Emitter Voltage |Vce|, V: 600V

Collector-Emitter saturation Voltage |Vcesat|, V: 1.8V

Maximum Gate-Emitter Voltage |Veg|, V:

Maximum Collector Current |Ic|, A: A

Maximum Junction Temperature (Tj), °C:

Rise Time, nS: 116

Maximum Collector Capacity (Cc), pF:

Package: TO247

IXGH48N60B3D1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

IXGH48N60B3D1 PDF doc:

1.1. ixgh48n60c3c1.pdf Size:185K _ixys

IXGH48N60B3D1
IXGH48N60B3D1

Preliminary Technical Information GenX3TM 600V IGBT VCES = 600V IXGH48N60C3C1 w/ SiC Anti-Parallel IC110 = 48A ? Diode VCE(sat) ? 2.5V ? ? ? tfi(typ) = 38ns High Speed PT IGBT for 40 - 100kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C, RGE = 1M? 600 V G C VGES Continuous 20 V E ( TAB ) VGEM Transient 30 V G

1.2. ixgh48n60b3c1.pdf Size:187K _ixys

IXGH48N60B3D1
IXGH48N60B3D1

Preliminary Technical Information GenX3TM 600V IGBT VCES = 600V IXGH48N60B3C1 w/ SiC Anti-Parallel IC110 = 48A ? Diode VCE(sat) ? 1.8V ? ? ? tfi(typ) = 116ns Medium Speed Low Vsat PT IGBT 5 - 40 kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TC = 25C to 150C 600 V G VCGR TJ = 25C to 150C, RGE = 1M? 600 V ( TAB ) C E VGES Continuous 20 V VGEM Transient

1.3. ixgh48n60a3d1.pdf Size:163K _ixys

IXGH48N60B3D1
IXGH48N60B3D1

VCES = 600V GenX3TM 600V IGBT IXGH48N60A3D1 with Diode IC110 = 48A ? VCE(sat) ? ? 1.35V ? ? Ultra Low Vsat PT IGBT for up to 5kHz switching TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25C to 150C 600 V VCGR TJ = 25C to 150C, RGE = 1M? 600 V VGES Continuous 20 V VGEM Transient 30 V G C (TAB) C E IC110 TC = 110C 48 A ICM TC = 25C, 1ms 300 A SSOA VGE

1.4. ixga48n60c3-ixgh48n60c3-ixgp48n60c3.pdf Size:223K _ixys

IXGH48N60B3D1
IXGH48N60B3D1

IXGA48N60C3 VCES = 600V GenX3TM 600V IGBT IXGH48N60C3 IC110 = 48A IXGP48N60C3 ? VCE(sat) ? ? 2.5V ? ? High Speed PT IGBTs for tfi(typ) = 38ns 40-100kHz switching TO-263 (IXGA) Symbol Test Conditions Maximum Ratings G VCES TC = 25C to 150C 600 V E (TAB) VCGR TJ = 25C to 150C, RGE = 1M? 600 V TO-247 (IXGH) VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25C ( Limi

1.5. ixgh48n60c3c1.pdf Size:183K _igbt

IXGH48N60B3D1
IXGH48N60B3D1

Preliminary Technical Information GenX3TM 600V IGBT VCES = 600V IXGH48N60C3C1 w/ SiC Anti-Parallel IC110 = 48A ≤ Diode VCE(sat) ≤ 2.5V ≤ ≤ ≤ tfi(typ) = 38ns High Speed PT IGBT for 40 - 100kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V G C VGES Continuous ±20 V E ( TAB ) VGEM

1.6. ixgh48n60b3.pdf Size:221K _igbt

IXGH48N60B3D1
IXGH48N60B3D1

IXGA48N60B3 VCES = 600V GenX3TM 600V IGBT IXGP48N60B3 IC110 = 48A IXGH48N60B3 ≤ VCE(sat) ≤ ≤ 1.8V ≤ ≤ Medium speed low Vsat PT IGBTs 5-40 kHz switching TO-263 (IXGA) Symbol Test Conditions Maximum Ratings G E VCES TC = 25°C to 150°C 600 V (TAB) VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V TO-220 (IXGP) VGES Continuous ± 20 V VGEM Transient ± 30 V IC110 TC = 1

1.7. ixgh48n60b3c1.pdf Size:185K _igbt

IXGH48N60B3D1
IXGH48N60B3D1

Preliminary Technical Information GenX3TM 600V IGBT VCES = 600V IXGH48N60B3C1 w/ SiC Anti-Parallel IC110 = 48A ≤ Diode VCE(sat) ≤ 1.8V ≤ ≤ ≤ tfi(typ) = 116ns Medium Speed Low Vsat PT IGBT 5 - 40 kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 600 V G VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V ( TAB ) C E VGES Continuous ± 20

1.8. ixgh48n60a3d1.pdf Size:201K _igbt

IXGH48N60B3D1
IXGH48N60B3D1

VCES = 600V GenX3TM 600V IGBT IXGH48N60A3D1 w/Diode IC110 = 48A ≤ VCE(sat) ≤ ≤ 1.35V ≤ ≤ Ultra Low Vsat PT IGBT for up to 5kHz switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 600 V G C Tab VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V E VGES Continuous ± 20 V VGEM Transient ± 30 V G = Gate C = Collector E = Emitter Tab = Colle

1.9. ixgh48n60c3d1.pdf Size:201K _igbt

IXGH48N60B3D1
IXGH48N60B3D1

VCES = 600V IXGH48N60C3D1 GenX3TM 600V IGBT IC110 = 48A with Diode ≤ VCE(sat) ≤ 2.5V ≤ ≤ ≤ tfi(typ) = 38ns High speed PT IGBT for 40-100kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V G VGES Continuous ±20 V C E VGEM Transient ±30 V ( TAB ) IC25 TC = 25°C (Limited by Leads)

1.10. ixgh48n60b3d1.pdf Size:200K _igbt

IXGH48N60B3D1
IXGH48N60B3D1

Preliminary Technical Information VCES = 600V GenX3TM 600V IGBT IXGH48N60B3D1 with Diode IC110 = 48A ≤ VCE(sat) ≤ ≤ 1.8V ≤ ≤ Medium speed low Vsat PT IGBTs 5-40 kHz switching TO-247(IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ± 20 V VGEM Transient ± 30 V G ( TAB ) C E I

1.11. ixgh48n60c3.pdf Size:240K _igbt

IXGH48N60B3D1
IXGH48N60B3D1

GenX3TM 600V IGBTs IXGI48N60C3 VCES = 600V IXGA48N60C3 IC110 = 48A IXGP48N60C3 ≤ ≤ 2.5V ≤ ≤ High-Speed PT IGBTs for VCE(sat) ≤ 40-100kHz Switching IXGH48N60C3 tfi(typ) = 38ns Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V Features VGES Continuous ± 20 V Optimized for Low Switching Losses VGEM Tra

1.12. ixgh48n60a3.pdf Size:234K _igbt

IXGH48N60B3D1
IXGH48N60B3D1

IXGA48N60A3 VCES = 600V GenX3TM 600V IXGP48N60A3 IGBTs IC110 = 48A IXGH48N60A3 ≤ VCE(sat) ≤ ≤ 1.35V ≤ ≤ Ultra Low Vsat PT IGBTs for TO-263 (IXGA) up to 5kHz switching G E Symbol Test Conditions Maximum Ratings C (Tab) VCES TJ = 25°C to 150°C 600 V TO-220 (IXGP) VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V G IC25 TC =

See also transistors datasheet: IXGH40N60C2 , IXGH40N60C2D1 , IXGH42N30C3 , IXGH45N120 , IXGH48N60A3 , IXGH48N60A3D1 , IXGH48N60B3 , IXGH48N60B3C1 , IKW50N60T , IXGH48N60C3 , IXGH48N60C3C1 , IXGH48N60C3D1 , IXGH4N250C , IXGH50N120C3 , IXGH50N60B2 , IXGH50N60B4 , IXGH50N60B4D1 .

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