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IXGH50N90B2D1 IGBT (IC) Datasheet. Cross Reference Search. IXGH50N90B2D1 Equivalent

Type Designator: IXGH50N90B2D1

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W:

Maximum collector-emitter voltage |Uce|, V: 900V

Collector-emitter saturation voltage |Ucesat|, V: 2.7V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 75A

Maximum junction temperature (Tj), °C:

Rise time, nS: 200

Maximum collector capacity (Cc), pF:

Package: TO247

IXGH50N90B2D1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

IXGH50N90B2D1 PDF doc:

1.1. ixgh50n90b2d1_ixgk50n90b2d1_ixgx50n90b2d1.pdf Size:203K _ixys

IXGH50N90B2D1
IXGH50N90B2D1

IXGH 50N90B2D1 VCES = 900 V HiPerFASTTM IXGK 50N90B2D1 IC25 = 75 A IGBT with Fast IXGX 50N90B2D1 VCE(sat) = 2.7 V Diode tfi typ = 200 ns B2-Class High Speed IGBT with Fast Diode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25C to 150C 900 V VCGR TJ = 25C to 150C; RGE = 1 M? 900 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V

1.2. ixgh50n90b2_ixgt50n90b2.pdf Size:162K _ixys

IXGH50N90B2D1
IXGH50N90B2D1

Advance Technical Information VCES = 900 V IXGH 50N90B2 HiPerFASTTM IGBT IC25 = 75 A B2-Class High Speed IGBTs IXGT 50N90B2 VCE(sat) = 2.7 V tfi typ = 200 ns Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25C to 150C 900 V VCGR TJ = 25C to 150C; RGE = 1 M? 900 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E TO-268 IC25 TC = 25C (limited by leads)

1.3. ixgh50n90b2d1.pdf Size:198K _igbt

IXGH50N90B2D1
IXGH50N90B2D1

IXGH 50N90B2D1 VCES = 900 V HiPerFASTTM IXGK 50N90B2D1 IC25 = 75 A IGBT with Fast IXGX 50N90B2D1 VCE(sat) = 2.7 V Diode tfi typ = 200 ns B2-Class High Speed IGBT with Fast Diode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25°C to 150°C 900 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 900 V C (TAB) VGES Continuous ± 20 V G C VGEM Transien

1.4. ixgh50n90b2.pdf Size:158K _igbt

IXGH50N90B2D1
IXGH50N90B2D1

Advance Technical Information VCES = 900 V IXGH 50N90B2 HiPerFASTTM IGBT IC25 = 75 A B2-Class High Speed IGBTs IXGT 50N90B2 VCE(sat) = 2.7 V tfi typ = 200 ns Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25°C to 150°C 900 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 900 V C (TAB) VGES Continuous ±20 V G C VGEM Transient ±30 V E TO-268 IC25 TC = 25°C (limit

See also transistors datasheet: IXGH50N120C3 , IXGH50N60B2 , IXGH50N60B4 , IXGH50N60B4D1 , IXGH50N60C2 , IXGH50N60C4 , IXGH50N60C4D1 , IXGH50N90B2 , SGP10N60A , IXGH56N60A3 , IXGH56N60B3 , IXGH56N60B3D1 , IXGH60N30C3 , IXGH60N60B2 , IXGH60N60C2 , IXGH60N60C3 , IXGH60N60C3D1 .

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