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G10N50 IGBT (IC) Datasheet. Cross Reference Search. G10N50 Equivalent

Type Designator: G10N50

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 75W

Maximum collector-emitter voltage |Uce|, V: 500V

Collector-emitter saturation voltage |Ucesat|, V: 2.5V

Maximum gate-emitter voltage |Ueg|, V: 20V

Maximum collector current |Ic|, A: 12A

Maximum junction temperature (Tj), °C: 150

Rise time, nS: 45

Maximum collector capacity (Cc), pF:

Package: TO251AA

G10N50 Transistor Equivalent Substitute - IGBT Cross-Reference Search

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See also transistors datasheet: CT60AM-18F , CT60AM-20 , CT75AM-12 , CY20AAJ-8 , CY25AAJ-8 , G10N40 , G10N40C1 , G10N40E1 , IXGP7N60B , G10N50C1 , G10N50E1 , G12N40C1 , G12N40C1D , G12N40E1 , G12N40E1D , G12N50C1 , G12N50C1D .

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 G10N50 - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


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