G10N50C1 IGBT Transistor Datasheet. Parameters and Characteristics.

Type Designator: G10N50C1

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 60W

Maximum collector-emitter voltage |Uce|, V: 500V

Collector-emitter saturation voltage |Ucesat|, V: 4.5V

Maximum gate-emitter voltage |Ueg|, V: 20V

Maximum collector current |Ic|, A: 10A

Maximum junction temperature (Tj), °C: 175

Rise time, nS: 50

Maximum collector capacity (Cc), pF:

Package: TO220

Equivalent transistors for G10N50C1

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See also transistors datasheet: CT60AM-20 , CT75AM-12 , CY20AAJ-8 , CY25AAJ-8 , G10N40 , G10N40C1 , G10N40E1 , G10N50 , GT60M102 , G10N50E1 , G12N40C1 , G12N40C1D , G12N40E1 , G12N40E1D , G12N50C1 , G12N50C1D , G12N50E1 .

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